Facilitated low-temperature continuous dynamic recrystallization in selectively laser melted AlSi10Mg alloy
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F25%3A10511305" target="_blank" >RIV/00216208:11320/25:10511305 - isvavai.cz</a>
Výsledek na webu
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=peBaLTcelu" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=peBaLTcelu</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jallcom.2025.183371" target="_blank" >10.1016/j.jallcom.2025.183371</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Facilitated low-temperature continuous dynamic recrystallization in selectively laser melted AlSi10Mg alloy
Popis výsledku v původním jazyce
Recrystallization in conventionally cast AlSi10Mg typically occurs at elevated temperatures due to coarse grains and low dislocation densities, with most studies reporting dynamic recrystallization onset above 300-400 degrees C. In contrast, Selective Laser Melting (SLM) produces a fine cellular substructure with high dislocation density and residual stresses, which reduces the energy barrier for recrystallization. This study investigates the microstructural evolution of SLMed AlSi10Mg during compressive deformation at 100 degrees C. The fraction of fine grains increases from 31.8 % to 60.6 %, accompanied by a rise in low-angle grain boundaries from 10.9 % to 32.3 %. Kernel Average Misorientation and Grain Orientation Spread maps confirm the activation of continuous dynamic recrystallization, even at this low temperature. Notably, the stress-strain curves exhibit clear flow softening behavior at 100 degrees C, with a softening fraction exceeding 10 %. The results demonstrate that the substructure developed during SLM facilitates low-temperature recrystallization, and contributes directly to the observed flow softening.
Název v anglickém jazyce
Facilitated low-temperature continuous dynamic recrystallization in selectively laser melted AlSi10Mg alloy
Popis výsledku anglicky
Recrystallization in conventionally cast AlSi10Mg typically occurs at elevated temperatures due to coarse grains and low dislocation densities, with most studies reporting dynamic recrystallization onset above 300-400 degrees C. In contrast, Selective Laser Melting (SLM) produces a fine cellular substructure with high dislocation density and residual stresses, which reduces the energy barrier for recrystallization. This study investigates the microstructural evolution of SLMed AlSi10Mg during compressive deformation at 100 degrees C. The fraction of fine grains increases from 31.8 % to 60.6 %, accompanied by a rise in low-angle grain boundaries from 10.9 % to 32.3 %. Kernel Average Misorientation and Grain Orientation Spread maps confirm the activation of continuous dynamic recrystallization, even at this low temperature. Notably, the stress-strain curves exhibit clear flow softening behavior at 100 degrees C, with a softening fraction exceeding 10 %. The results demonstrate that the substructure developed during SLM facilitates low-temperature recrystallization, and contributes directly to the observed flow softening.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
—
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2025
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Alloys and Compounds
ISSN
0925-8388
e-ISSN
1873-4669
Svazek periodika
1039
Číslo periodika v rámci svazku
neuveden
Stát vydavatele periodika
CH - Švýcarská konfederace
Počet stran výsledku
7
Strana od-do
183371
Kód UT WoS článku
001563099100011
EID výsledku v databázi Scopus
2-s2.0-105014606172