Expression of the optical constants of chalcogenide thin films using the new parameterization dispersion model

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F03%3A00008103" target="_blank" >RIV/00216224:14310/03:00008103 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Expression of the optical constants of chalcogenide thin films using the new parameterization dispersion model

Popis výsledku v původním jazyce

In this paper, a new dispersion model of the optical constants of amorphous solids enabling us to perform an efficient parameterization of the spectral dependences of the optical constants of chalcogenide thin films will be presented. This dispersion model is based on mathematical modeling the density of electronic states (DOS) corresponding to both the valence and conduction bands. The imaginary part of the dielectric function is then calculated by the numerical convolution of the DOS. The real part ofthe dielectric function is calculated using the corresponding Kramers-Kronig (KK) relation in a suitable numerical way. Moreover, the existence of the transitions between the localized states inside the band gap and the extended states inside both the valence and conduction bands is also taken into account using the corresponding convolutions. Thus, the dispersion model presented includes the absorption corresponding to the Urbach and Tauc regions. Then the dispersion model described al

Název v anglickém jazyce

Expression of the optical constants of chalcogenide thin films using the new parameterization dispersion model

Popis výsledku anglicky

In this paper, a new dispersion model of the optical constants of amorphous solids enabling us to perform an efficient parameterization of the spectral dependences of the optical constants of chalcogenide thin films will be presented. This dispersion model is based on mathematical modeling the density of electronic states (DOS) corresponding to both the valence and conduction bands. The imaginary part of the dielectric function is then calculated by the numerical convolution of the DOS. The real part ofthe dielectric function is calculated using the corresponding Kramers-Kronig (KK) relation in a suitable numerical way. Moreover, the existence of the transitions between the localized states inside the band gap and the extended states inside both the valence and conduction bands is also taken into account using the corresponding convolutions. Thus, the dispersion model presented includes the absorption corresponding to the Urbach and Tauc regions. Then the dispersion model described al

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/GA203%2F00%2F0085" target="_blank" >GA203/00/0085: Optické vlastnosti skel a amorfních tenkých vrstev sulfidů a selenidů</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2003

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

212-213

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

116-121

Kód UT WoS článku

—

EID výsledku v databázi Scopus

—