Excitonic fine structure splitting in type-II quantum dots

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F15%3A00080412" target="_blank" >RIV/00216224:14310/15:00080412 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216305:26620/15:PU116631

Výsledek na webu

<a href="http://dx.doi.org/10.1103/PhysRevB.92.195430" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.92.195430</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.92.195430" target="_blank" >10.1103/PhysRevB.92.195430</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Excitonic fine structure splitting in type-II quantum dots

Popis výsledku v původním jazyce

Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb capping layer. We show that very small values of the fine structure splitting comparable with the natural linewidth of the excitonic transitions are achievable for realistic quantum dots despite the structural elongation and the piezoelectric field. For example, varying the capping layer thickness allows for a fine tuning of the splitting energy. The effect is explained by a strong sensitivity of the hole wave function to the quantum dot structure and a mutual compensation of the electron and hole anisotropies. Theoscillator strength of the excitonic transitions in the studied quantum dots is comparable to those with a type-I confinement which makes the dots attractive for quantum communication technology as emitters of polarization-entangled photo

Název v anglickém jazyce

Excitonic fine structure splitting in type-II quantum dots

Popis výsledku anglicky

Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb capping layer. We show that very small values of the fine structure splitting comparable with the natural linewidth of the excitonic transitions are achievable for realistic quantum dots despite the structural elongation and the piezoelectric field. For example, varying the capping layer thickness allows for a fine tuning of the splitting energy. The effect is explained by a strong sensitivity of the hole wave function to the quantum dot structure and a mutual compensation of the electron and hole anisotropies. Theoscillator strength of the excitonic transitions in the studied quantum dots is comparable to those with a type-I confinement which makes the dots attractive for quantum communication technology as emitters of polarization-entangled photo

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B

ISSN

1098-0121

e-ISSN

—

Svazek periodika

92

Číslo periodika v rámci svazku

19

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

"nestránkováno"

Kód UT WoS článku

000365507900004

EID výsledku v databázi Scopus

—