Interband absorption edge in the topological insulators Bi-2(Te1-xSex)(3)

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F17%3A00099464" target="_blank" >RIV/00216224:14310/17:00099464 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/17:10366325

Výsledek na webu

<a href="http://dx.doi.org/10.1103/PhysRevB.96.235202" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.96.235202</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.96.235202" target="_blank" >10.1103/PhysRevB.96.235202</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Interband absorption edge in the topological insulators Bi-2(Te1-xSex)(3)

Popis výsledku v původním jazyce

We have investigated the optical properties of thin films of topological insulators Bi2Te3, Bi2Se3, and their alloys Bi-2(Te1-x Se-x)(3) on BaF2 substrates by a combination of infrared ellipsometry and reflectivity in the energy range from 0.06 to 6.5 eV. For the onset of interband absorption in Bi2Se3, after the correction for the Burstein-Moss effect, we find the value of the direct band gap of 215 +/- 10 meV at 10 K. Our data support the picture that Bi2Se3 has a direct band gap located at the Gamma point in the Brillouin zone and that the valence band reaches up to the Dirac point and has the shape of a downward-oriented paraboloid, i.e., without a camel-back structure. In Bi2Te3, the onset of strong direct interband absorption at 10 K is at a similar energy of about 200 meV, with a weaker additional feature at about 170 meV. Our data support the recent GW band-structure calculations suggesting that the direct interband transition does not occur at the Gamma point but near the Z-F line of the Brillouin zone. In the Bi-2(Te1-x Se-x)(3) alloy, the energy of the onset of direct interband transitions exhibits a maximum near x = 0.3 (i.e., the composition of Bi2Te2Se), suggesting that the crossover of the direct interband transitions between the two points in the Brillouin zone occurs close to this composition.

Název v anglickém jazyce

Interband absorption edge in the topological insulators Bi-2(Te1-xSex)(3)

Popis výsledku anglicky

We have investigated the optical properties of thin films of topological insulators Bi2Te3, Bi2Se3, and their alloys Bi-2(Te1-x Se-x)(3) on BaF2 substrates by a combination of infrared ellipsometry and reflectivity in the energy range from 0.06 to 6.5 eV. For the onset of interband absorption in Bi2Se3, after the correction for the Burstein-Moss effect, we find the value of the direct band gap of 215 +/- 10 meV at 10 K. Our data support the picture that Bi2Se3 has a direct band gap located at the Gamma point in the Brillouin zone and that the valence band reaches up to the Dirac point and has the shape of a downward-oriented paraboloid, i.e., without a camel-back structure. In Bi2Te3, the onset of strong direct interband absorption at 10 K is at a similar energy of about 200 meV, with a weaker additional feature at about 170 meV. Our data support the recent GW band-structure calculations suggesting that the direct interband transition does not occur at the Gamma point but near the Z-F line of the Brillouin zone. In the Bi-2(Te1-x Se-x)(3) alloy, the energy of the onset of direct interband transitions exhibits a maximum near x = 0.3 (i.e., the composition of Bi2Te2Se), suggesting that the crossover of the direct interband transitions between the two points in the Brillouin zone occurs close to this composition.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B

ISSN

2469-9950

e-ISSN

—

Svazek periodika

96

Číslo periodika v rámci svazku

23

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

„235202-1“-„235202-10“

Kód UT WoS článku

000417757200005

EID výsledku v databázi Scopus

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