Temperature dependent dispersion models applicable in solid state physics

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F19%3A00111216" target="_blank" >RIV/00216224:14310/19:00111216 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.2478/jee-2019-0036" target="_blank" >https://doi.org/10.2478/jee-2019-0036</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.2478/jee-2019-0036" target="_blank" >10.2478/jee-2019-0036</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Temperature dependent dispersion models applicable in solid state physics

Popis výsledku v původním jazyce

Dispersion models are necessary for precise determination of the dielectric response of materials used in optical and microelectronics industry. Although the study of the dielectric response is often limited only to the dependence of the optical constants on frequency, it is also important to consider its dependence on other quantities characterizing the state of the system. One of the most important quantities determining the state of the condensed matter in equilibrium is temperature. Introducing temperature dependence into dispersion models is quite challenging. A physically correct model of dielectric response must respect three fundamental and one supplementary conditions imposed on the dielectric function. The three fundamental conditions are the time-reversal symmetry, Kramers-Kronig consistency and sum rule. These three fundamental conditions are valid for any material in any state. For systems in equilibrium there is also a supplementary dissipative condition. In this contribution it will be shown how these conditions can be applied in the construction of temperature dependent dispersion models. Practical results will be demonstrated on the temperature dependent dispersion model of crystalline silicon.

Název v anglickém jazyce

Temperature dependent dispersion models applicable in solid state physics

Popis výsledku anglicky

Dispersion models are necessary for precise determination of the dielectric response of materials used in optical and microelectronics industry. Although the study of the dielectric response is often limited only to the dependence of the optical constants on frequency, it is also important to consider its dependence on other quantities characterizing the state of the system. One of the most important quantities determining the state of the condensed matter in equilibrium is temperature. Introducing temperature dependence into dispersion models is quite challenging. A physically correct model of dielectric response must respect three fundamental and one supplementary conditions imposed on the dielectric function. The three fundamental conditions are the time-reversal symmetry, Kramers-Kronig consistency and sum rule. These three fundamental conditions are valid for any material in any state. For systems in equilibrium there is also a supplementary dissipative condition. In this contribution it will be shown how these conditions can be applied in the construction of temperature dependent dispersion models. Practical results will be demonstrated on the temperature dependent dispersion model of crystalline silicon.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LO1411" target="_blank" >LO1411: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electrical Engineering

ISSN

1335-3632

e-ISSN

1339-309X

Svazek periodika

70

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

SK - Slovenská republika

Počet stran výsledku

15

Strana od-do

1-15

Kód UT WoS článku

000489301300001

EID výsledku v databázi Scopus

2-s2.0-85073213129