A New Approach to the Crystallization of Perovskite Films by Cold Hydrogen Atmospheric Pressure Plasma

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F20%3A00115206" target="_blank" >RIV/00216224:14310/20:00115206 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1007/s11090-020-10059-1" target="_blank" >https://doi.org/10.1007/s11090-020-10059-1</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s11090-020-10059-1" target="_blank" >10.1007/s11090-020-10059-1</a>

Jazyk výsledku

angličtina

Název v původním jazyce

A New Approach to the Crystallization of Perovskite Films by Cold Hydrogen Atmospheric Pressure Plasma

Popis výsledku v původním jazyce

This contribution presents a new approach to rapid and low-temperature plasma-chemical crystallization of perovskite films. Chlorine-incorporated perovskite (MAPbI(3-x)Cl(x)) films were exposed to diffuse atmospheric hydrogen (H-2) plasma immediately after their deposition. Several types of surface characterization techniques were used to investigate the effect of the H-2 plasma on the surface of the perovskite films. Since the H-2 plasma was generated at a low temperature (&lt;= 70 degrees C), there was no considerable damage to the plasma-treated perovskite films-although the morphology and chemistry changed significantly. H-2 plasma had a range of effects on the surface of the perovskite films: (1) changes in the chemical composition of the perovskite surface without removal of lead; (2) modification of the optoelectrical band structure; (3) crystallization of the perovskite film; and (4) the grain of the surface became highly ordered. The results presented demonstrate that H-2 plasma is a rapid and low-cost method for the manufacture of crystallized perovskite films. The method may be considered a significant step towards low-temperature, annealing-free crystallization of perovskite films.

Název v anglickém jazyce

A New Approach to the Crystallization of Perovskite Films by Cold Hydrogen Atmospheric Pressure Plasma

Popis výsledku anglicky

This contribution presents a new approach to rapid and low-temperature plasma-chemical crystallization of perovskite films. Chlorine-incorporated perovskite (MAPbI(3-x)Cl(x)) films were exposed to diffuse atmospheric hydrogen (H-2) plasma immediately after their deposition. Several types of surface characterization techniques were used to investigate the effect of the H-2 plasma on the surface of the perovskite films. Since the H-2 plasma was generated at a low temperature (&lt;= 70 degrees C), there was no considerable damage to the plasma-treated perovskite films-although the morphology and chemistry changed significantly. H-2 plasma had a range of effects on the surface of the perovskite films: (1) changes in the chemical composition of the perovskite surface without removal of lead; (2) modification of the optoelectrical band structure; (3) crystallization of the perovskite film; and (4) the grain of the surface became highly ordered. The results presented demonstrate that H-2 plasma is a rapid and low-cost method for the manufacture of crystallized perovskite films. The method may be considered a significant step towards low-temperature, annealing-free crystallization of perovskite films.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Plasma Chemistry and Plasma Processing

ISSN

0272-4324

e-ISSN

1572-8986

Svazek periodika

40

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

539-548

Kód UT WoS článku

000514534500007

EID výsledku v databázi Scopus

2-s2.0-85077554079