Thermoelectric properties and nonstoichiometry of GaGeTe

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F12%3A39895842" target="_blank" >RIV/00216275:25310/12:39895842 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1063/1.4731548" target="_blank" >http://dx.doi.org/10.1063/1.4731548</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4731548" target="_blank" >10.1063/1.4731548</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Thermoelectric properties and nonstoichiometry of GaGeTe

Popis výsledku v původním jazyce

The polycrystalline samples of composition Ga(1+x)Ge(1-x)Te (x = (?0.03)-0.07) were synthesized from elements of 5N purity using solid state reaction. The products of synthesis were identified by X-ray diffraction. The samples for transport measurementswere prepared using hot-pressing. They were characterized by the measurement of electric conductivity, Hall coefficient and Seebeck coefficient over a temperature range 80-450K and thermal conductivity over a temperature range 300-500 K. The samples showall p-type conductivity and we observe an increase in hole concentration with increasing x (content of Ga). We discuss the influence of Ga/Ge ratio on the phase purity of the samples and free carrier concentration. The investigation of thermoelectric properties shows that ZT parameter of these samples is too low at room temperature but increase distinctly with temperature.

Název v anglickém jazyce

Thermoelectric properties and nonstoichiometry of GaGeTe

Popis výsledku anglicky

The polycrystalline samples of composition Ga(1+x)Ge(1-x)Te (x = (?0.03)-0.07) were synthesized from elements of 5N purity using solid state reaction. The products of synthesis were identified by X-ray diffraction. The samples for transport measurementswere prepared using hot-pressing. They were characterized by the measurement of electric conductivity, Hall coefficient and Seebeck coefficient over a temperature range 80-450K and thermal conductivity over a temperature range 300-500 K. The samples showall p-type conductivity and we observe an increase in hole concentration with increasing x (content of Ga). We discuss the influence of Ga/Ge ratio on the phase purity of the samples and free carrier concentration. The investigation of thermoelectric properties shows that ZT parameter of these samples is too low at room temperature but increase distinctly with temperature.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

9th European Conference on Thermoelectrics (ECT2011)

ISSN

0094-243X

e-ISSN

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Svazek periodika

1449

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

267-270

Kód UT WoS článku

000313173100065

EID výsledku v databázi Scopus

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