THE CRYSTAL GROWTH KINETICS IN GeS2

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F12%3A39895979" target="_blank" >RIV/00216275:25310/12:39895979 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

THE CRYSTAL GROWTH KINETICS IN GeS2

Popis výsledku v původním jazyce

Optical measurement of GeS2 crystal growth in undercooled melts was carried out by using optical microscopy. The length of crystals was measured isothermally by different temperature in the range 398-437 °C as time dependence. This behavior is characteristic for crystal growth controlled by crystal-liquid interface kinetics. The temperature dependence of reduced growth rate UR provides information about the growth sites at the interface. There are three basic models suitable for description of crystal growth in undercooled melt. Positive curvature of reduced growth rate depending on undercooling is typical for two-dimensional surface nucleated growth. The activation energy of crystal growth of GeS2 EG = 167 +- 8 kJ?mol-1 was obtained from the slope oflogarithm of crystal growth rate u plotted versus reciprocal temperature 1/T. The crystal growth kinetics of GeS2 thin films will be discussed.

Název v anglickém jazyce

THE CRYSTAL GROWTH KINETICS IN GeS2

Popis výsledku anglicky

Optical measurement of GeS2 crystal growth in undercooled melts was carried out by using optical microscopy. The length of crystals was measured isothermally by different temperature in the range 398-437 °C as time dependence. This behavior is characteristic for crystal growth controlled by crystal-liquid interface kinetics. The temperature dependence of reduced growth rate UR provides information about the growth sites at the interface. There are three basic models suitable for description of crystal growth in undercooled melt. Positive curvature of reduced growth rate depending on undercooling is typical for two-dimensional surface nucleated growth. The activation energy of crystal growth of GeS2 EG = 167 +- 8 kJ?mol-1 was obtained from the slope oflogarithm of crystal growth rate u plotted versus reciprocal temperature 1/T. The crystal growth kinetics of GeS2 thin films will be discussed.

Druh

O - Ostatní výsledky

CEP obor

CF - Fyzikální chemie a teoretická chemie

OECD FORD obor

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Projekt

<a href="/cs/project/EE2.3.09.0104" target="_blank" >EE2.3.09.0104: Podpora odborného vzdělávání a rozvoje vědeckovýzkumného týmu Centra materiálového výzkumu Pardubice</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů