Preparation and optical properties of thin films of the system Ge28-xGaxS72

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F12%3A39895990" target="_blank" >RIV/00216275:25310/12:39895990 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Preparation and optical properties of thin films of the system Ge28-xGaxS72

Popis výsledku v původním jazyce

Because of the specific properties of chalcogenide glasses, they can be used as potential materials in many devices in electronics and optoelectronics. Therefore it is main issue of research at many academic groups [1]. Bulk samples with compositions Ge28S72, Ge26Ga2S72, Ge24Ga4S72 and Ge22Ga6S72 were prepared by direct synthesis from elements with high purity. The thin films of these glasses were prepared by two different methods. By thermal vacuum evaporation (VE) with three different chambers the three types of thin films were obtained. The forth type of films was prepared by pulsed lased deposition (PLD). The samples of thin films were characterized by X-Ray diffraction analysis (XRD), Energy Dispersive X-Ray analysis (EDX), Raman spectroscopy, UV/VIS spectroscopy and Variable Angle Spectral Ellipsometry (VASE). The different methods of preparation as well as the different chambers have a large influence to the properties of prepared thin films, such as thickness, refractive index

Název v anglickém jazyce

Preparation and optical properties of thin films of the system Ge28-xGaxS72

Popis výsledku anglicky

Because of the specific properties of chalcogenide glasses, they can be used as potential materials in many devices in electronics and optoelectronics. Therefore it is main issue of research at many academic groups [1]. Bulk samples with compositions Ge28S72, Ge26Ga2S72, Ge24Ga4S72 and Ge22Ga6S72 were prepared by direct synthesis from elements with high purity. The thin films of these glasses were prepared by two different methods. By thermal vacuum evaporation (VE) with three different chambers the three types of thin films were obtained. The forth type of films was prepared by pulsed lased deposition (PLD). The samples of thin films were characterized by X-Ray diffraction analysis (XRD), Energy Dispersive X-Ray analysis (EDX), Raman spectroscopy, UV/VIS spectroscopy and Variable Angle Spectral Ellipsometry (VASE). The different methods of preparation as well as the different chambers have a large influence to the properties of prepared thin films, such as thickness, refractive index

Druh

O - Ostatní výsledky

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů