Crystallization kinetics of Se-Te thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F14%3A39898713" target="_blank" >RIV/00216275:25310/14:39898713 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.tsf.2014.10.005" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2014.10.005</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2014.10.005" target="_blank" >10.1016/j.tsf.2014.10.005</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Crystallization kinetics of Se-Te thin films

Popis výsledku v původním jazyce

Differential scanning calorimetry was used to study the non-isothermal crystallization behavior of selenium-tellurium thin films within the 0-30 at.% Te compositional range. The non-isothermal crystallization kinetics were described in terms of the Johnson-Mehl-Avrami nucleation-growth model. The apparent activation energy of crystallization was found to exhibit a step-like compositional behavior, with E changing from similar to 115 to similar to 145 kJ.mol(-1) in the 10-15 at.% Te range. Two-dimensional growth of crystallites, consistent with the idea of sterically restricted crystallization in a thin layer, was confirmed for all data. However, in the case of the Se70Te30 thin film, indications of three-dimensional crystal growth were found at high heating rates. This corresponds to the previously reported behavior of Se-Te chalcogenide matrices, where the addition of tellurium leads to the formation of smaller, volume-located crystallites.

Název v anglickém jazyce

Crystallization kinetics of Se-Te thin films

Popis výsledku anglicky

Differential scanning calorimetry was used to study the non-isothermal crystallization behavior of selenium-tellurium thin films within the 0-30 at.% Te compositional range. The non-isothermal crystallization kinetics were described in terms of the Johnson-Mehl-Avrami nucleation-growth model. The apparent activation energy of crystallization was found to exhibit a step-like compositional behavior, with E changing from similar to 115 to similar to 145 kJ.mol(-1) in the 10-15 at.% Te range. Two-dimensional growth of crystallites, consistent with the idea of sterically restricted crystallization in a thin layer, was confirmed for all data. However, in the case of the Se70Te30 thin film, indications of three-dimensional crystal growth were found at high heating rates. This corresponds to the previously reported behavior of Se-Te chalcogenide matrices, where the addition of tellurium leads to the formation of smaller, volume-located crystallites.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CF - Fyzikální chemie a teoretická chemie

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Svazek periodika

571

Číslo periodika v rámci svazku

November

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

121-126

Kód UT WoS článku

000346053900020

EID výsledku v databázi Scopus

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