Structural features of spin-coated thin films of binary AsxS100-x chalcogenide glass system

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F15%3A39901039" target="_blank" >RIV/00216275:25310/15:39901039 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.tsf.2015.06.049" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2015.06.049</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2015.06.049" target="_blank" >10.1016/j.tsf.2015.06.049</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Structural features of spin-coated thin films of binary AsxS100-x chalcogenide glass system

Popis výsledku v původním jazyce

Spin-coating technology offers a convenient method for fabricating photostable chalcogenide glass thin films that are especially attractive for applications in IR optics. In this paper we report the structure of spin-coated AsxS100 (-) (x) (x = 30, 35, 40) thin films as determined using high resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, especially in relation to composition (i.e. As/S ratio) and preparation process variables. It was observed that As atoms during preparation have a tendency to precipitate out in close to stoichiometric compositions. The mechanism of bonding between the inorganic matrix and organic residuals is discussed based on the experimental data. A weak interaction between S ions and amine-based clustersis proposed as the basis of structural organization of the organic-inorganic interface.

Název v anglickém jazyce

Structural features of spin-coated thin films of binary AsxS100-x chalcogenide glass system

Popis výsledku anglicky

Spin-coating technology offers a convenient method for fabricating photostable chalcogenide glass thin films that are especially attractive for applications in IR optics. In this paper we report the structure of spin-coated AsxS100 (-) (x) (x = 30, 35, 40) thin films as determined using high resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, especially in relation to composition (i.e. As/S ratio) and preparation process variables. It was observed that As atoms during preparation have a tendency to precipitate out in close to stoichiometric compositions. The mechanism of bonding between the inorganic matrix and organic residuals is discussed based on the experimental data. A weak interaction between S ions and amine-based clustersis proposed as the basis of structural organization of the organic-inorganic interface.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Svazek periodika

589

Číslo periodika v rámci svazku

Srpen 2015

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

642-648

Kód UT WoS článku

000360320000101

EID výsledku v databázi Scopus

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