Investigation of an amphoteric behaviour of arsenic dopant in polycrystalline SnSe

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F18%3A39912715" target="_blank" >RIV/00216275:25310/18:39912715 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of an amphoteric behaviour of arsenic dopant in polycrystalline SnSe

Popis výsledku v původním jazyce

We investigated eventual amphoteric behaviour of As atoms in SnSe by substituting in either cation or anion site. The investigation involved two series of polycrystalline samples of nominal composition Sn(1-x)As(x)Se (0 &lt;= x &lt;= 0.1) and SnAsxSe1-x (0 &lt;= x &lt;= 0.08). The prepared powders were identified by X-ray diffraction. Hot-pressed from powder, polycrystalline pellets were used for characterization of transport and thermoelectric properties in temperature range of 300–730 K. An embedding of the As atoms in either cation or anion site seems to prevent formation of the major defects present in the undoped SnSe, tin vacancies Vsub(Sn2-). Instead, selenium vacancies Vsub(Se2+) together with substitutional defects As(Sn)+ play the major role in the electronic transport in the Sn(1-x)As(x)Se system. Due to rather low solubility of arsenic in the system (x &lt; 0.02), either As inclusions or amorphous As-Se phase is formed in highly doped samples. In the case of SnAs(x)Se(1-x), As atoms enter Se position forming AsSe-, which increases the hole concentration in the doped samples at lower temperatures. At higher temperatures, the properties of the compounds (for x &gt; 0.03) are influenced by the formation of highly conductive AsSn phase. Generally, the substitution of As for both anion and cation lead to no evident enhancement of the thermoelectric figure of merit ZT.

Název v anglickém jazyce

Investigation of an amphoteric behaviour of arsenic dopant in polycrystalline SnSe

Popis výsledku anglicky

We investigated eventual amphoteric behaviour of As atoms in SnSe by substituting in either cation or anion site. The investigation involved two series of polycrystalline samples of nominal composition Sn(1-x)As(x)Se (0 &lt;= x &lt;= 0.1) and SnAsxSe1-x (0 &lt;= x &lt;= 0.08). The prepared powders were identified by X-ray diffraction. Hot-pressed from powder, polycrystalline pellets were used for characterization of transport and thermoelectric properties in temperature range of 300–730 K. An embedding of the As atoms in either cation or anion site seems to prevent formation of the major defects present in the undoped SnSe, tin vacancies Vsub(Sn2-). Instead, selenium vacancies Vsub(Se2+) together with substitutional defects As(Sn)+ play the major role in the electronic transport in the Sn(1-x)As(x)Se system. Due to rather low solubility of arsenic in the system (x &lt; 0.02), either As inclusions or amorphous As-Se phase is formed in highly doped samples. In the case of SnAs(x)Se(1-x), As atoms enter Se position forming AsSe-, which increases the hole concentration in the doped samples at lower temperatures. At higher temperatures, the properties of the compounds (for x &gt; 0.03) are influenced by the formation of highly conductive AsSn phase. Generally, the substitution of As for both anion and cation lead to no evident enhancement of the thermoelectric figure of merit ZT.

Druh

J_ost - Ostatní články v recenzovaných periodicích

CEP obor

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OECD FORD obor

20501 - Materials engineering

Projekt

<a href="/cs/project/GA16-07711S" target="_blank" >GA16-07711S: Systematická studie vlivu výšky Schottkyho bariéry na energetické filtrování elektronů v termoelektrických nanokompozitech.</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Scientific Papers of the University of Pardubice, Series A, Faculty of Chemical Technology

ISSN

1211-5541

e-ISSN

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Svazek periodika

24

Číslo periodika v rámci svazku

November

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

14

Strana od-do

87-100

Kód UT WoS článku

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EID výsledku v databázi Scopus

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