Solution processed Ge20Sb5S75 thin films: the effect of solution concentration and multiple layers stacking

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F19%3A39914842" target="_blank" >RIV/00216275:25310/19:39914842 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.osapublishing.org/ome/abstract.cfm?uri=ome-9-11-4360" target="_blank" >https://www.osapublishing.org/ome/abstract.cfm?uri=ome-9-11-4360</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1364/OME.9.004360" target="_blank" >10.1364/OME.9.004360</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Solution processed Ge20Sb5S75 thin films: the effect of solution concentration and multiple layers stacking

Popis výsledku v původním jazyce

Ge20Sb5S75 thin films with high chemical resistance to aliphatic amines were deposited from solutions of various glass concentrations (0.015-0.09 g of grinded glass material/ml of n-butylamine) by the spin-coating technique. As-prepared and annealed thin films were analyzed by spectroscopic ellipsometry and EDS (energy-dispersive X-ray spectroscopy). Results proved that the refractive index of thin films was not affected by the solution concentration (within studied range), and the studied optical properties of deposited samples were homogenous in their volume. The Ge20Sb5S75 solution of the highest concentration (0.09 g/ml) was chosen for deposition of thicker chalcogenide glass material using multiply deposition/thermal stabilization procedure. Prepared multilayers proved to have good optical quality and homogenous chemical resistance through the whole thickness. No interfaces between layers were observed from etching kinetics and SEM scans. Thus, the results confirmed that multiple layers stacking procedure is suitable for deposition of thick homogenous Ge20Sb5S75 thin films.

Název v anglickém jazyce

Solution processed Ge20Sb5S75 thin films: the effect of solution concentration and multiple layers stacking

Popis výsledku anglicky

Ge20Sb5S75 thin films with high chemical resistance to aliphatic amines were deposited from solutions of various glass concentrations (0.015-0.09 g of grinded glass material/ml of n-butylamine) by the spin-coating technique. As-prepared and annealed thin films were analyzed by spectroscopic ellipsometry and EDS (energy-dispersive X-ray spectroscopy). Results proved that the refractive index of thin films was not affected by the solution concentration (within studied range), and the studied optical properties of deposited samples were homogenous in their volume. The Ge20Sb5S75 solution of the highest concentration (0.09 g/ml) was chosen for deposition of thicker chalcogenide glass material using multiply deposition/thermal stabilization procedure. Prepared multilayers proved to have good optical quality and homogenous chemical resistance through the whole thickness. No interfaces between layers were observed from etching kinetics and SEM scans. Thus, the results confirmed that multiple layers stacking procedure is suitable for deposition of thick homogenous Ge20Sb5S75 thin films.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optical Materials Express

ISSN

2159-3930

e-ISSN

—

Svazek periodika

9

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

4360-4369

Kód UT WoS článku

000493994700022

EID výsledku v databázi Scopus

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