Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F21%3A39918041" target="_blank" >RIV/00216275:25310/21:39918041 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/10.1021/acsanm.1c01504" target="_blank" >https://pubs.acs.org/doi/10.1021/acsanm.1c01504</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsanm.1c01504" target="_blank" >10.1021/acsanm.1c01504</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices

Popis výsledku v původním jazyce

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have demonstrated a very strong application potential. In order to realize it, the synthesis of stoichiometric 2D TMDCs on a large scale is crucial. Here, we consider a typical TMDC representative, MoS2, and present an approach for the fabrication of well-ordered crystalline films via the crystallization of a thin amorphous layer by annealing at 800 degrees C, which was investigated in terms of long-range and short-range orders. Strong preferential crystal growth of layered MoS2 along the &lt; 002 &gt; crystallographic plane from the as-deposited 3D amorphous phase is discussed together with the mechanism of the crystallization process disclosed by molecular dynamic simulations using the Vienna Ab initio Simulation Package. We believe that the obtained results may be generalized for materials. The proposed approach demonstrates a simple and efficient way to fabricate thin 2D TMDCs for applications in nano-and optoelectronic devices.

Název v anglickém jazyce

Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices

Popis výsledku anglicky

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have demonstrated a very strong application potential. In order to realize it, the synthesis of stoichiometric 2D TMDCs on a large scale is crucial. Here, we consider a typical TMDC representative, MoS2, and present an approach for the fabrication of well-ordered crystalline films via the crystallization of a thin amorphous layer by annealing at 800 degrees C, which was investigated in terms of long-range and short-range orders. Strong preferential crystal growth of layered MoS2 along the &lt; 002 &gt; crystallographic plane from the as-deposited 3D amorphous phase is discussed together with the mechanism of the crystallization process disclosed by molecular dynamic simulations using the Vienna Ab initio Simulation Package. We believe that the obtained results may be generalized for materials. The proposed approach demonstrates a simple and efficient way to fabricate thin 2D TMDCs for applications in nano-and optoelectronic devices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS applied nano materials

ISSN

2574-0970

e-ISSN

—

Svazek periodika

4

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

8834-8844

Kód UT WoS článku

000702079900020

EID výsledku v databázi Scopus

2-s2.0-85115645762