Imaging of the expansion of femtosecond-laser-produced silicon plasma atoms by off-resonant planar laser-induced fluorescence

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F03%3APU41010" target="_blank" >RIV/00216305:26210/03:PU41010 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Imaging of the expansion of femtosecond-laser-produced silicon plasma atoms by off-resonant planar laser-induced fluorescence

Popis výsledku v původním jazyce

Planar laser-induced fluorescence measurements were used to investigate the expansion dynamics of a femtosecond laser-induced plasma. Temporally and spatially resolved measurements were performed to monitor the atoms that were ablated from a silicon target. A dye laser (lambda = 288.16 nm) was used to excite fluorescence signals. The radiation of an off-resonant transition (Si 390.55 nm) was observed at different distances from the target surface. This allowed easy detection of the ablated Si atoms withhout problems caused by scattered laser light. Abel inversion was applied to obtain the radial distribution of the Si atoms. The atom distribution in the plasma shows some peculiarities, depending on the crater depth. (C) 2003 Optical Society of America.

Název v anglickém jazyce

Imaging of the expansion of femtosecond-laser-produced silicon plasma atoms by off-resonant planar laser-induced fluorescence

Popis výsledku anglicky

Planar laser-induced fluorescence measurements were used to investigate the expansion dynamics of a femtosecond laser-induced plasma. Temporally and spatially resolved measurements were performed to monitor the atoms that were ablated from a silicon target. A dye laser (lambda = 288.16 nm) was used to excite fluorescence signals. The radiation of an off-resonant transition (Si 390.55 nm) was observed at different distances from the target surface. This allowed easy detection of the ablated Si atoms withhout problems caused by scattered laser light. Abel inversion was applied to obtain the radial distribution of the Si atoms. The atom distribution in the plasma shows some peculiarities, depending on the crater depth. (C) 2003 Optical Society of America.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2003

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Optics

ISSN

0003-6935

e-ISSN

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Svazek periodika

42

Číslo periodika v rámci svazku

30

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

6001-6005

Kód UT WoS článku

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EID výsledku v databázi Scopus

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