Kompaktní model nanorozměrového dvou-hradlového tranzistoru typu MOSFET.

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU51327" target="_blank" >RIV/00216305:26220/05:PU51327 - isvavai.cz</a>
Výsledek na webu
—
DOI - Digital Object Identifier
—

Jazyk výsledku
angličtina
Název v původním jazyce
A Compact Model of the Nanoscale Double-Gate MOSFET.
Popis výsledku v původním jazyce
We would like to present a simple, compact model for the nanoscale DG MOSFET using a flux method originally introduced by McKelvey. McKelvey's flux method captures the essential physics of carrier transport in transistors and has been previously used forthin-base diodes and bipolar transistors. The device displays high transconductance and near-ideal subthreshold swing and the two gates provide good electrostatic integrity which minimizes drain induced barrier lowering (DIBL) and threshold variation wwith channel length. This work is based on paper from Dr. Lundstrom and Dr. Rahman.
Název v anglickém jazyce
A Compact Model of the Nanoscale Double-Gate MOSFET.
Popis výsledku anglicky
We would like to present a simple, compact model for the nanoscale DG MOSFET using a flux method originally introduced by McKelvey. McKelvey's flux method captures the essential physics of carrier transport in transistors and has been previously used forthin-base diodes and bipolar transistors. The device displays high transconductance and near-ideal subthreshold swing and the two gates provide good electrostatic integrity which minimizes drain induced barrier lowering (DIBL) and threshold variation wwith channel length. This work is based on paper from Dr. Lundstrom and Dr. Rahman.

Rok uplatnění
2005
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Podobné výsledky(10)