Bulk Resistance Decay in CdTe

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU82501" target="_blank" >RIV/00216305:26220/09:PU82501 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Bulk Resistance Decay in CdTe

Popis výsledku v původním jazyce

Bulk resistance decay of cadmium telluride (CdTe) single crystals was investigated. The bulk resistance of each CdTe single crystal was measured during long time interval. The samples were placed into a cryostat. That allowed us to hold the temperature constant during the measurements and eliminate the illumination influence. The measurements started and were continued at 300 K and after some period of time it was sharply raised up to 390 K. We observed the resistance slow decreasing with time with temperature T = 300 K and T = 390 K. All the samples have very high value of relaxation time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or between the conductivity band and deep donor levels cause this long value of relaxation time.

Název v anglickém jazyce

Bulk Resistance Decay in CdTe

Popis výsledku anglicky

Bulk resistance decay of cadmium telluride (CdTe) single crystals was investigated. The bulk resistance of each CdTe single crystal was measured during long time interval. The samples were placed into a cryostat. That allowed us to hold the temperature constant during the measurements and eliminate the illumination influence. The measurements started and were continued at 300 K and after some period of time it was sharply raised up to 390 K. We observed the resistance slow decreasing with time with temperature T = 300 K and T = 390 K. All the samples have very high value of relaxation time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or between the conductivity band and deep donor levels cause this long value of relaxation time.

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F07%2F0113" target="_blank" >GA102/07/0113: Diagnostika Schottkyho a studenoemisních katod pomocí elektronického šumu</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

IEEE EUROCON 2009

ISBN

978-1-4244-3861-7

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

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Název nakladatele

Institute of Electrical and Electronics Engineers, St. Petersburg

Místo vydání

St. Petersburg, Russia

Místo konání akce

Saint-Petersburg

Datum konání akce

18. 5. 2009

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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