High Performance Wideband CMOS CCI with High Voltage Swing

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU100684" target="_blank" >RIV/00216305:26220/12:PU100684 - isvavai.cz</a>
Výsledek na webu
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Jazyk výsledku
angličtina
Název v původním jazyce
High Performance Wideband CMOS CCI with High Voltage Swing
Popis výsledku v původním jazyce
In this study, low-voltage, high performance and wideband CMOS first generation current conveyor (CCI) is proposed. The proposed CCI has very low equivalent impedance on port X. It also has high voltage swings on input and output ports and wideband current and voltage transfer ratios. Furthermore, two novel grounded inductance simulator circuits are proposed as application examples. It is shown that the simulation results are in very good agreement with the expected ones.
Název v anglickém jazyce
High Performance Wideband CMOS CCI with High Voltage Swing
Popis výsledku anglicky
In this study, low-voltage, high performance and wideband CMOS first generation current conveyor (CCI) is proposed. The proposed CCI has very low equivalent impedance on port X. It also has high voltage swings on input and output ports and wideband current and voltage transfer ratios. Furthermore, two novel grounded inductance simulator circuits are proposed as application examples. It is shown that the simulation results are in very good agreement with the expected ones.

Rok uplatnění
2012
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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