Microwave Solid State Power Amplifier Technology

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU103552" target="_blank" >RIV/00216305:26220/13:PU103552 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Microwave Solid State Power Amplifier Technology

Popis výsledku v původním jazyce

This paper is focused on our current research in the field of power amplifier technology for microwaves, especially the X-band. For this purpose we considered different active devices. Unfortunately, we did not manage to obtain super modern GaN transistors (chips) for these frequencies such as TGA2023-05 from TriQuint or module such as TGA-2554-GSG from the same producer. Instead we used internally matched GaAs FETs from Eudyna as well as GaAs module XP-1006A from Mimix. Subsequently we have designed, built and tested three power amplifiers with different active devices and output power of 4, 8 and 20 Watts on 10 GHz. In the paper we would like to introduce design and completion of the amplifiers as well as test results. The highest power we achieved by double stage with 90 degrees 3 dB hybrid couplers at the input and output. The microstrip technique on PTFE substrate has been used. Critical parts of layouts were optimized by using ANSYS modeling software. The dc circuitry needs to be

Název v anglickém jazyce

Microwave Solid State Power Amplifier Technology

Popis výsledku anglicky

This paper is focused on our current research in the field of power amplifier technology for microwaves, especially the X-band. For this purpose we considered different active devices. Unfortunately, we did not manage to obtain super modern GaN transistors (chips) for these frequencies such as TGA2023-05 from TriQuint or module such as TGA-2554-GSG from the same producer. Instead we used internally matched GaAs FETs from Eudyna as well as GaAs module XP-1006A from Mimix. Subsequently we have designed, built and tested three power amplifiers with different active devices and output power of 4, 8 and 20 Watts on 10 GHz. In the paper we would like to introduce design and completion of the amplifiers as well as test results. The highest power we achieved by double stage with 90 degrees 3 dB hybrid couplers at the input and output. The microstrip technique on PTFE substrate has been used. Critical parts of layouts were optimized by using ANSYS modeling software. The dc circuitry needs to be

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

13th Conference on Microwave Techniques COMITE 2013

ISBN

978-1-4673-5513-1

ISSN

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e-ISSN

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Počet stran výsledku

203

Strana od-do

173-176

Název nakladatele

Univerzita Pardubice

Místo vydání

Pardubice

Místo konání akce

Pardubice

Datum konání akce

16. 4. 2013

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

000324875000030