Single BJT based temperature measurement circuit without MIMC and calibration

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F16%3APU121793" target="_blank" >RIV/00216305:26220/16:PU121793 - isvavai.cz</a>

Výsledek na webu

<a href="http://link.springer.com/article/10.1007/s10470-016-0911-1" target="_blank" >http://link.springer.com/article/10.1007/s10470-016-0911-1</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10470-016-0911-1" target="_blank" >10.1007/s10470-016-0911-1</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Single BJT based temperature measurement circuit without MIMC and calibration

Popis výsledku v původním jazyce

This paper presents a temperature measurement circuit which uses only one single Bipolar Junction Transistor for ∆Vbe measurement. This type of measurement is suitable for Complementary Metal–Oxide–Semiconductor (CMOS) processes, where characterized Thermal Sensing Diodes (TSDs) are available. Measurements are based on dynamic biasing which is synchronized with Correlated Double Sampling to suppress 1/f noise, offset and reduce power consumption in the sensor. Furthermore, this work avoids the use of Metal Insulator Metal Capacitors, which might be a cost concern for some designs. Based on these criteria, a test chip was designed and manufactured in standard 110 nm CMOS technology. Without any trimming, an accuracy of ±7.3 °C (3σ) over a temperature range of -40 to 125 °C was achieved. Measurements were performed across one typical wafer and 4 process corner wafers. A single TSD is used as the thermal sensing element. The circuit occupies an area of 0.26 mm2 and has an energy consumption of 1.3 uJ per conversion.

Název v anglickém jazyce

Single BJT based temperature measurement circuit without MIMC and calibration

Popis výsledku anglicky

This paper presents a temperature measurement circuit which uses only one single Bipolar Junction Transistor for ∆Vbe measurement. This type of measurement is suitable for Complementary Metal–Oxide–Semiconductor (CMOS) processes, where characterized Thermal Sensing Diodes (TSDs) are available. Measurements are based on dynamic biasing which is synchronized with Correlated Double Sampling to suppress 1/f noise, offset and reduce power consumption in the sensor. Furthermore, this work avoids the use of Metal Insulator Metal Capacitors, which might be a cost concern for some designs. Based on these criteria, a test chip was designed and manufactured in standard 110 nm CMOS technology. Without any trimming, an accuracy of ±7.3 °C (3σ) over a temperature range of -40 to 125 °C was achieved. Measurements were performed across one typical wafer and 4 process corner wafers. A single TSD is used as the thermal sensing element. The circuit occupies an area of 0.26 mm2 and has an energy consumption of 1.3 uJ per conversion.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Analog Integrated Circuits and Signal Processing

ISSN

0925-1030

e-ISSN

1573-1979

Svazek periodika

2016

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

1-8

Kód UT WoS článku

000396121500011

EID výsledku v databázi Scopus

2-s2.0-85007158411