High Efficiency Classes of RF Amplifiers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU127914" target="_blank" >RIV/00216305:26220/18:PU127914 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.elektrorevue.cz/cz/clanky/komunikacni-technologie/0/high-efficiency-classes-of-rf-amplifiers/" target="_blank" >http://www.elektrorevue.cz/cz/clanky/komunikacni-technologie/0/high-efficiency-classes-of-rf-amplifiers/</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

High Efficiency Classes of RF Amplifiers

Popis výsledku v původním jazyce

This article is dealing with high efficiency RF amplifiers in modern classes F, E and J. The first part is focused on basic function, main parameters and the output matching topologies of the mentioned classes. Output voltage and current waveforms were simulated for each class of high efficiency amplifiers. The primary focus of this work is the practical design of class F amplifier for 435 MHz band with E-pHEMT transistor. Power added efficiency (PAE) of amplifier achieved 58% and output power was 27 dBm with 14 dBm of input power. Amplifier was realized exclusively with lumped components in order to adhere to the given dimensions. Class F amplifiers designed at megahertz frequencies and with E-pHEMT transistor are quite rare and this article could help designers with understanding narrowband F-class amplifiers with higher efficiency. This amplifier can be used in long range IoT application, because of its low consumption of energy which is necessary in this modern technology. All results were simulated within ADS Keysight environment. Every simulation was realized with nonlinear models from Modelithics.

Název v anglickém jazyce

High Efficiency Classes of RF Amplifiers

Popis výsledku anglicky

This article is dealing with high efficiency RF amplifiers in modern classes F, E and J. The first part is focused on basic function, main parameters and the output matching topologies of the mentioned classes. Output voltage and current waveforms were simulated for each class of high efficiency amplifiers. The primary focus of this work is the practical design of class F amplifier for 435 MHz band with E-pHEMT transistor. Power added efficiency (PAE) of amplifier achieved 58% and output power was 27 dBm with 14 dBm of input power. Amplifier was realized exclusively with lumped components in order to adhere to the given dimensions. Class F amplifiers designed at megahertz frequencies and with E-pHEMT transistor are quite rare and this article could help designers with understanding narrowband F-class amplifiers with higher efficiency. This amplifier can be used in long range IoT application, because of its low consumption of energy which is necessary in this modern technology. All results were simulated within ADS Keysight environment. Every simulation was realized with nonlinear models from Modelithics.

Druh

J_ost - Ostatní články v recenzovaných periodicích

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/LO1401" target="_blank" >LO1401: Interdisciplinární výzkum bezdrátových technologií</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Elektrorevue - Internetový časopis (http://www.elektrorevue.cz)

ISSN

1213-1539

e-ISSN

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Svazek periodika

20

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

5

Strana od-do

1-5

Kód UT WoS článku

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EID výsledku v databázi Scopus

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