Universal power sequencer for RF power amplifiers

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F20%3APU136380" target="_blank" >RIV/00216305:26220/20:PU136380 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Jazyk výsledku
angličtina
Název v původním jazyce
Universal power sequencer for RF power amplifiers
Popis výsledku v původním jazyce
More often used Gallium Nitride (GaN) based Radio-Frequency high power transistors in the various RF configuration w.g. Doherty is by their nature easily destroyed, great care must be taken, when powering-up and shutting down this circuits. That means, proper power biasing and sequencing is necessary. The Doherty type RF PA with RF drivers four differnet gate, drain voltages and time when when the individual voltages ate turned on and off must be controled. Universal power sequencer and biasing device, which meets this requirements is described.
Název v anglickém jazyce
Universal power sequencer for RF power amplifiers
Popis výsledku anglicky
More often used Gallium Nitride (GaN) based Radio-Frequency high power transistors in the various RF configuration w.g. Doherty is by their nature easily destroyed, great care must be taken, when powering-up and shutting down this circuits. That means, proper power biasing and sequencing is necessary. The Doherty type RF PA with RF drivers four differnet gate, drain voltages and time when when the individual voltages ate turned on and off must be controled. Universal power sequencer and biasing device, which meets this requirements is described.

Rok uplatnění
2020
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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