Implementation of Logical and Memory Functions with Memristor Cellular Nonlinear Networks

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F20%3APU137708" target="_blank" >RIV/00216305:26220/20:PU137708 - isvavai.cz</a>

Výsledek na webu

<a href="https://dx.doi.org/10.1109/ECCTD49232.2020.9218420" target="_blank" >https://dx.doi.org/10.1109/ECCTD49232.2020.9218420</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/ECCTD49232.2020.9218420" target="_blank" >10.1109/ECCTD49232.2020.9218420</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Implementation of Logical and Memory Functions with Memristor Cellular Nonlinear Networks

Popis výsledku v původním jazyce

The peculiar combined capability of nonvolatile resistance switching memories to store and process data within a common nanoscale physical medium allows to implement disruptive mem-computing paradigms in hybrid circuits leveraging the compatibility of CMOS and memristive technologies. This may pave the way toward the future development of minaturized, lightweight, ultra-dense, high-speed and low-power universal memcomputers with sensing functionality on board. Since the availability of technical products of this kind would respond to the current demands of the Internet-of-Things industry, it is timely to investigate the functionalities and limitations of memristive memcomputing structures, such as those arranged in cellular bio-inspired architectures. The adoption of memristors in circuit design brings new life to nonlinear system theory, since standard analysis and synthesis techniques from linear system theory are no longer applicable for the investigation of highlynonlinear electronic systems. This paper demonstrates how the use of standard and novel concepts from nonlinear system theory allow to design a Memristor Cellular Nonlinear Network for the execution of pixel-wise logical boolean functions on binary images, and the concurrent storage of input or output data into the memristive memory bank, providing clear evidence for the truly mem-computing character of its memristor-centered signal processing paradigm.

Název v anglickém jazyce

Implementation of Logical and Memory Functions with Memristor Cellular Nonlinear Networks

Popis výsledku anglicky

The peculiar combined capability of nonvolatile resistance switching memories to store and process data within a common nanoscale physical medium allows to implement disruptive mem-computing paradigms in hybrid circuits leveraging the compatibility of CMOS and memristive technologies. This may pave the way toward the future development of minaturized, lightweight, ultra-dense, high-speed and low-power universal memcomputers with sensing functionality on board. Since the availability of technical products of this kind would respond to the current demands of the Internet-of-Things industry, it is timely to investigate the functionalities and limitations of memristive memcomputing structures, such as those arranged in cellular bio-inspired architectures. The adoption of memristors in circuit design brings new life to nonlinear system theory, since standard analysis and synthesis techniques from linear system theory are no longer applicable for the investigation of highlynonlinear electronic systems. This paper demonstrates how the use of standard and novel concepts from nonlinear system theory allow to design a Memristor Cellular Nonlinear Network for the execution of pixel-wise logical boolean functions on binary images, and the concurrent storage of input or output data into the memristive memory bank, providing clear evidence for the truly mem-computing character of its memristor-centered signal processing paradigm.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/GA18-21608S" target="_blank" >GA18-21608S: Memristory a další nekonvenční obvodové prvky</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2020 European Conference on Circuit Theory and Design (ECCTD)

ISBN

9781728171838

ISSN

—

e-ISSN

—

Počet stran výsledku

8

Strana od-do

1-8

Název nakladatele

IEEE

Místo vydání

Sofia, Bulgaria

Místo konání akce

Sofia

Datum konání akce

7. 9. 2020

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

000631927000055