Hyperchaotic self-oscillations of two-stage class C amplifier with generalized transistors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F21%3APU140687" target="_blank" >RIV/00216305:26220/21:PU140687 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/document/9409077" target="_blank" >https://ieeexplore.ieee.org/document/9409077</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/ACCESS.2021.3074367" target="_blank" >10.1109/ACCESS.2021.3074367</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Hyperchaotic self-oscillations of two-stage class C amplifier with generalized transistors

Popis výsledku v původním jazyce

This paper yields process of development, numerical analysis, lumped circuit modeling, and experimental verification of a new hyperchaotic oscillator based on the fundamental topology of two-stage amplifier. Analyzed network structure contains two generalized bipolar transistors connected with common emitter. Both transistors are initially modeled as two-ports via full admittance matrix, considering linear backward trans-conductance and polynomial forward trans-conductance. As proved in paper, these two scalar nonlinearities can push amplifier to exhibit robust hyperchaotic behavior with significantly high Kaplan-Yorke dimension. Regions of chaos and hyperchaos in a space of admittance parameters associated with both transistors are specified following the concept of positive values of Lyapunov exponents. Long time structural stability of generated hyperchaotic waveforms is proved by construction of flow-equivalent electronic circuit and experimental measurement, that is by screenshots captured by oscilloscope.

Název v anglickém jazyce

Hyperchaotic self-oscillations of two-stage class C amplifier with generalized transistors

Popis výsledku anglicky

This paper yields process of development, numerical analysis, lumped circuit modeling, and experimental verification of a new hyperchaotic oscillator based on the fundamental topology of two-stage amplifier. Analyzed network structure contains two generalized bipolar transistors connected with common emitter. Both transistors are initially modeled as two-ports via full admittance matrix, considering linear backward trans-conductance and polynomial forward trans-conductance. As proved in paper, these two scalar nonlinearities can push amplifier to exhibit robust hyperchaotic behavior with significantly high Kaplan-Yorke dimension. Regions of chaos and hyperchaos in a space of admittance parameters associated with both transistors are specified following the concept of positive values of Lyapunov exponents. Long time structural stability of generated hyperchaotic waveforms is proved by construction of flow-equivalent electronic circuit and experimental measurement, that is by screenshots captured by oscilloscope.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/GA19-22248S" target="_blank" >GA19-22248S: Deterministické, chaotické a stochastické jevy v sub-mikronových integrovaných strukturách</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Access

ISSN

2169-3536

e-ISSN

—

Svazek periodika

9

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

13

Strana od-do

62182-62194

Kód UT WoS článku

000645037700001

EID výsledku v databázi Scopus

2-s2.0-85104679212