Extended and Generic Higher-Order Elements for MEMS Modeling

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F22%3APU146139" target="_blank" >RIV/00216305:26220/22:PU146139 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60162694:G43__/23:00558444

Výsledek na webu

<a href="https://doi.org/10.3390/s22208007" target="_blank" >https://doi.org/10.3390/s22208007</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/s22208007" target="_blank" >10.3390/s22208007</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Extended and Generic Higher-Order Elements for MEMS Modeling

Popis výsledku v původním jazyce

State-dependent resistors, capacitors, and inductors are a common part of many smart engineering solutions, e.g., in MEMS (Micro-Electro-Mechanical Systems) sensors and actuators, Micro/NanoMachines, or biomimetic systems. These memory elements are today modeled as generic and extended memristors (MR), memcapacitors (MC), and meminductors (ML), which are more general versions of classical MR, MC, and ML from the infinite set of the fundamental elements of electrical engineering, known as Higher-Order Elements (HOEs). It turns out that models of many complex phenomena in MEMS cannot be constructed only from classical and state-dependent elements such as R, L, and C, but that other HOEs with generalized behavior should also be used. Thus, in this paper, generic and extended versions of HOEs are introduced, overcoming the existing limitation to MR, MC, and ML elements. The relevant circuit theorems are formulated, which generalize the well-known theorems of classical memory elements, and their application to model complex processes of various physical natures in MEMS is shown.

Název v anglickém jazyce

Extended and Generic Higher-Order Elements for MEMS Modeling

Popis výsledku anglicky

State-dependent resistors, capacitors, and inductors are a common part of many smart engineering solutions, e.g., in MEMS (Micro-Electro-Mechanical Systems) sensors and actuators, Micro/NanoMachines, or biomimetic systems. These memory elements are today modeled as generic and extended memristors (MR), memcapacitors (MC), and meminductors (ML), which are more general versions of classical MR, MC, and ML from the infinite set of the fundamental elements of electrical engineering, known as Higher-Order Elements (HOEs). It turns out that models of many complex phenomena in MEMS cannot be constructed only from classical and state-dependent elements such as R, L, and C, but that other HOEs with generalized behavior should also be used. Thus, in this paper, generic and extended versions of HOEs are introduced, overcoming the existing limitation to MR, MC, and ML elements. The relevant circuit theorems are formulated, which generalize the well-known theorems of classical memory elements, and their application to model complex processes of various physical natures in MEMS is shown.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/GA20-26849S" target="_blank" >GA20-26849S: Nové algoritmy pro přesnou, efektivní a robustní analýzu rozsáhlých systémů</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

SENSORS

ISSN

1424-8220

e-ISSN

1424-3210

Svazek periodika

22

Číslo periodika v rámci svazku

20

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

15

Strana od-do

1-15

Kód UT WoS článku

000873585100001

EID výsledku v databázi Scopus

2-s2.0-85140634023