Design of Differential Oscillator with Dielectric Resonator in a 130 nm SiGe BiCMOS Technology

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F23%3APU148335" target="_blank" >RIV/00216305:26220/23:PU148335 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/abstract/document/10109083" target="_blank" >https://ieeexplore.ieee.org/abstract/document/10109083</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/RADIOELEKTRONIKA57919.2023.10109083" target="_blank" >10.1109/RADIOELEKTRONIKA57919.2023.10109083</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Design of Differential Oscillator with Dielectric Resonator in a 130 nm SiGe BiCMOS Technology

Popis výsledku v původním jazyce

The paper describes a design and simulation of the differential driver for a dielectric resonator as an Application Specific Integrated Circuit for Ultra-Wideband (UWB) sensor systems. The driver was implemented in 130 nm SiGe BiCMOS technology from IHP Microelectronics. The circuit was designed for the parallel configuration of microstrip lines, with coupled cylindrical dielectric resonator between them. In the simulations, the circuit oscillated around required 21.75 GHz frequency with an equivalent dielectric resonator circuit. The wire-bond inductance influence on driver frequency and matching are simulated and explained. The power consumption of the oscillator is 25 mA at 2.5 V power supply. The maximum simulated single-ended output amplitude achieves 660 mVpp.

Název v anglickém jazyce

Design of Differential Oscillator with Dielectric Resonator in a 130 nm SiGe BiCMOS Technology

Popis výsledku anglicky

The paper describes a design and simulation of the differential driver for a dielectric resonator as an Application Specific Integrated Circuit for Ultra-Wideband (UWB) sensor systems. The driver was implemented in 130 nm SiGe BiCMOS technology from IHP Microelectronics. The circuit was designed for the parallel configuration of microstrip lines, with coupled cylindrical dielectric resonator between them. In the simulations, the circuit oscillated around required 21.75 GHz frequency with an equivalent dielectric resonator circuit. The wire-bond inductance influence on driver frequency and matching are simulated and explained. The power consumption of the oscillator is 25 mA at 2.5 V power supply. The maximum simulated single-ended output amplitude achieves 660 mVpp.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20200 - Electrical engineering, Electronic engineering, Information engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

RADIOELEKTRONIKA 2023: 2023 33rd International Conference Radioelektronika

ISBN

979-8-3503-9834-2

ISSN

—

e-ISSN

—

Počet stran výsledku

5

Strana od-do

1-5

Název nakladatele

IEEE

Místo vydání

NEW YORK

Místo konání akce

Pardubice

Datum konání akce

19. 4. 2023

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000990505700056