Local electrical characteristic of memristor structure in a high-resistance state obtained using electrostatic force microscopy: Fractal and multifractal dynamics of surface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F23%3APU150056" target="_blank" >RIV/00216305:26220/23:PU150056 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0169433223025436?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0169433223025436?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2023.158863" target="_blank" >10.1016/j.apsusc.2023.158863</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Local electrical characteristic of memristor structure in a high-resistance state obtained using electrostatic force microscopy: Fractal and multifractal dynamics of surface

Popis výsledku v původním jazyce

A heterostructure BiFeO3/TiO2(Nt)Ti (BFOT) was obtained by the atomic layer deposition (ALD) method. After thermal treatment, the redistribution of Fe/Ti atoms forms an Aurivillius intermediate layered phase, and local charge capture centers are formed in the sample. Due to cationic non-stoichiometry, the BFO film exhibits p-type conductivity, while the nanotubes exhibit n-type conductivity due to oxygen vacancies. It was observed that lateral displacement of the sample can lead to ferroelectric switching, which can, in turn, affect the transition of the memristive structure from high-resistance (HRS) to low-resistance states (LRS). The hysteresis suppression tends to transition to an ohmic character and depends on the amplitude, frequency, and duration of the periodic signal. It has been found that compensation of static charge during resistive switching can affect the transport properties of the material. Fractal dimension analysis showed an acceleration of structure restructuring with increasing voltage, possibly contributing to the transition from an insulator to a metal in certain areas of the film volume. The joint analysis of piezoresponse force microscopy (PFM), electrostatic force microscopy (EFM), and fractal/multifractal dynamics showed a correlation between surface static charge and piezopotential. The new methodology described in this work can help understand the resistive switching processes in ferroelectric/ semiconductor memristive structures.

Název v anglickém jazyce

Local electrical characteristic of memristor structure in a high-resistance state obtained using electrostatic force microscopy: Fractal and multifractal dynamics of surface

Popis výsledku anglicky

A heterostructure BiFeO3/TiO2(Nt)Ti (BFOT) was obtained by the atomic layer deposition (ALD) method. After thermal treatment, the redistribution of Fe/Ti atoms forms an Aurivillius intermediate layered phase, and local charge capture centers are formed in the sample. Due to cationic non-stoichiometry, the BFO film exhibits p-type conductivity, while the nanotubes exhibit n-type conductivity due to oxygen vacancies. It was observed that lateral displacement of the sample can lead to ferroelectric switching, which can, in turn, affect the transition of the memristive structure from high-resistance (HRS) to low-resistance states (LRS). The hysteresis suppression tends to transition to an ohmic character and depends on the amplitude, frequency, and duration of the periodic signal. It has been found that compensation of static charge during resistive switching can affect the transport properties of the material. Fractal dimension analysis showed an acceleration of structure restructuring with increasing voltage, possibly contributing to the transition from an insulator to a metal in certain areas of the film volume. The joint analysis of piezoresponse force microscopy (PFM), electrostatic force microscopy (EFM), and fractal/multifractal dynamics showed a correlation between surface static charge and piezopotential. The new methodology described in this work can help understand the resistive switching processes in ferroelectric/ semiconductor memristive structures.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10400 - Chemical sciences

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

647

Číslo periodika v rámci svazku

Únor 2024

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

12

Strana od-do

1-12

Kód UT WoS článku

001127876500001

EID výsledku v databázi Scopus

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