Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F24%3APU151550" target="_blank" >RIV/00216305:26220/24:PU151550 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/document/10410212" target="_blank" >https://ieeexplore.ieee.org/document/10410212</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/JSEN.2024.3353669" target="_blank" >10.1109/JSEN.2024.3353669</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

Popis výsledku v původním jazyce

The research presented in this article draws inspiration from previous efforts aimed at replicating the functions of various solid-state memristors using a variety of materials. The memristor circuit emulator serves as a cost-effective tool for circuit designers, enabling them to experiment with the diverse electrical characteristics of corresponding solid-state memristors. This article specifically focuses on the circuit-based emulation of silicon nanowire (SiNW) known for its effectiveness in biosensing applications. First, a fully floating memristor emulator has been presented based on a voltage differencing current conveyor (VDCC) and an operational transconductance amplifier (OTA)-controlled resistor, along with a grounded capacitance. Furthermore, the proposed memristor emulator was realized by employing integrated cells based on the discussed technology, and the simulation/experimental results are presented and analyzed. The experiments also confirmed the nonvolatile behavior of the realized memristor. The results demonstrate that the real-time implementation of the proposed emulator can accurately generate hysteretic behavior in both incremental and decremental memristive mode. Finally, the incremental and decremental pinched hysteresis loop (PHL) responses generated by the proposed emulator have been utilized to replicate the various types of memristive responses offered by SiNW by adding a simple extension to the circuit.

Název v anglickém jazyce

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

Popis výsledku anglicky

The research presented in this article draws inspiration from previous efforts aimed at replicating the functions of various solid-state memristors using a variety of materials. The memristor circuit emulator serves as a cost-effective tool for circuit designers, enabling them to experiment with the diverse electrical characteristics of corresponding solid-state memristors. This article specifically focuses on the circuit-based emulation of silicon nanowire (SiNW) known for its effectiveness in biosensing applications. First, a fully floating memristor emulator has been presented based on a voltage differencing current conveyor (VDCC) and an operational transconductance amplifier (OTA)-controlled resistor, along with a grounded capacitance. Furthermore, the proposed memristor emulator was realized by employing integrated cells based on the discussed technology, and the simulation/experimental results are presented and analyzed. The experiments also confirmed the nonvolatile behavior of the realized memristor. The results demonstrate that the real-time implementation of the proposed emulator can accurately generate hysteretic behavior in both incremental and decremental memristive mode. Finally, the incremental and decremental pinched hysteresis loop (PHL) responses generated by the proposed emulator have been utilized to replicate the various types of memristive responses offered by SiNW by adding a simple extension to the circuit.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20200 - Electrical engineering, Electronic engineering, Information engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE SENSORS JOURNAL

ISSN

1530-437X

e-ISSN

1558-1748

Svazek periodika

24

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

8036-8044

Kód UT WoS článku

001197673400086

EID výsledku v databázi Scopus

2-s2.0-85182929631