Lattice-based Threshold Signature Optimization for RAM Constrained Devices
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F24%3APU151674" target="_blank" >RIV/00216305:26220/24:PU151674 - isvavai.cz</a>
Výsledek na webu
<a href="https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2023_sbornik_1.pdf" target="_blank" >https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2023_sbornik_1.pdf</a>
DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Lattice-based Threshold Signature Optimization for RAM Constrained Devices
Popis výsledku v původním jazyce
The DS2 scheme is a lattice-based (n, n)-threshold signature based on the standardized Dilithium signature. However, deploying DS2, as well as Dilithium, on microcontrollers is a challenge due to the memory limitations of these devices. While the decryption phase can be implemented relatively straightforwardly, the key generation and signing phases require the generation and manipulation of large matrices and vectors, which can quickly exhaust the available memory on the microcontroller. In this paper, we propose an optimization of the DS2 key generation and signing algorithms tailored for microcontrollers. Our approach focuses on minimizing memory consumption by generating large elements, such as the commitment key ck and the random commitment parameter r, on the fly from random and non-random seeds. This approach significantly reduces the overall size of the signature from 143 KB to less than 5 KB, depending on the number of signers involved. We also split the algorithms into two distinct components: a security-critical part and a non-security-critical part. The security-critical part contains operations that require secret knowledge and must be run on the microcontroller itself. Conversely, the non-critical part contains operations that do not require secret knowledge and can be performed on a connected, more powerful central host.
Název v anglickém jazyce
Lattice-based Threshold Signature Optimization for RAM Constrained Devices
Popis výsledku anglicky
The DS2 scheme is a lattice-based (n, n)-threshold signature based on the standardized Dilithium signature. However, deploying DS2, as well as Dilithium, on microcontrollers is a challenge due to the memory limitations of these devices. While the decryption phase can be implemented relatively straightforwardly, the key generation and signing phases require the generation and manipulation of large matrices and vectors, which can quickly exhaust the available memory on the microcontroller. In this paper, we propose an optimization of the DS2 key generation and signing algorithms tailored for microcontrollers. Our approach focuses on minimizing memory consumption by generating large elements, such as the commitment key ck and the random commitment parameter r, on the fly from random and non-random seeds. This approach significantly reduces the overall size of the signature from 143 KB to less than 5 KB, depending on the number of signers involved. We also split the algorithms into two distinct components: a security-critical part and a non-security-critical part. The security-critical part contains operations that require secret knowledge and must be run on the microcontroller itself. Conversely, the non-critical part contains operations that do not require secret knowledge and can be performed on a connected, more powerful central host.
Klasifikace
Druh
D - Stať ve sborníku
CEP obor
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OECD FORD obor
20203 - Telecommunications
Návaznosti výsledku
Projekt
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Návaznosti
S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2024
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název statě ve sborníku
Proceedings I of the 30 th Conference STUDENT EEICT 2024: General papers
ISBN
978-80-214-6231-1
ISSN
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e-ISSN
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Počet stran výsledku
4
Strana od-do
147-150
Název nakladatele
Brno University of Technology, Faculty of Electrical Engineering and Communication
Místo vydání
Brno
Místo konání akce
Brno
Datum konání akce
23. 4. 2024
Typ akce podle státní příslušnosti
WRD - Celosvětová akce
Kód UT WoS článku
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