How the series resistance influence the transconductance of the OECT planar structure

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F20%3APU137592" target="_blank" >RIV/00216305:26310/20:PU137592 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

How the series resistance influence the transconductance of the OECT planar structure

Popis výsledku v původním jazyce

The organic electrochemical transistor (OECT) plays an important role in modern bioelectronics. Its use in study of living cells physiology keeps this device very attractive and at the forefront of various organic bioelectronic devices [1]. In a case of some bioelectronic applications, namely in sensing, the high gain of the OECT is needed. The key parameter which describes high gain in OECT is transconductance. Since the transconductance describes the modulation of the gate voltage to the drain current [2,3], a strong dependence on channel parameters is known [3,4]. To develop the OECT with high transconductance, an optimal electrical properties of the semiconductor and the length and width of the channel must be found. However, for the sample with high ratio of width and thickness to channel length (Wd/L), the dependence of transconductance on channel parameters was shown to be nonlinear [5]. Kaphle et al. shown that the contact resistance plays the significant role in a case of highly doped organic

Název v anglickém jazyce

How the series resistance influence the transconductance of the OECT planar structure

Popis výsledku anglicky

The organic electrochemical transistor (OECT) plays an important role in modern bioelectronics. Its use in study of living cells physiology keeps this device very attractive and at the forefront of various organic bioelectronic devices [1]. In a case of some bioelectronic applications, namely in sensing, the high gain of the OECT is needed. The key parameter which describes high gain in OECT is transconductance. Since the transconductance describes the modulation of the gate voltage to the drain current [2,3], a strong dependence on channel parameters is known [3,4]. To develop the OECT with high transconductance, an optimal electrical properties of the semiconductor and the length and width of the channel must be found. However, for the sample with high ratio of width and thickness to channel length (Wd/L), the dependence of transconductance on channel parameters was shown to be nonlinear [5]. Kaphle et al. shown that the contact resistance plays the significant role in a case of highly doped organic

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10403 - Physical chemistry

Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů