Impact of Low-Temperature Seed-Assisted Growth on the Structural and Optoelectronic Properties of MAPbBr(3) Single Crystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F23%3APU148686" target="_blank" >RIV/00216305:26310/23:PU148686 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/10.1021/acs.chemmater.3c00780" target="_blank" >https://pubs.acs.org/doi/10.1021/acs.chemmater.3c00780</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.chemmater.3c00780" target="_blank" >10.1021/acs.chemmater.3c00780</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Impact of Low-Temperature Seed-Assisted Growth on the Structural and Optoelectronic Properties of MAPbBr(3) Single Crystals

Popis výsledku v původním jazyce

This work presents a detailed investigation of seed andnucleation-assistedgrowth methods for the inverse temperature crystallization (ITC) ofmethyl-ammonium lead bromide single crystals. We have demonstratedthat low-temperature seed-assisted growth results in significantimprovements in both optical and electrical responses of the materialcompared to the nucleation-assisted growth. Specifically, the spacecharge limited current method reveals a reduced trap-filled limitvoltage of 0.287 V for the seed-assisted crystal compared to 0.923V for the nucleation-assisted one, resulting in differences in trapdensity values. Temperature dependence space charge limited currentanalysis confirms these results, showing trap densities of 9.47 x10(9) cm(-3) for seeded crystal growth comparedto 3.21 x 10(10) cm(-3) for the nucleation-assistedgrowth, as well as a lower trap energy level for the seeded crystal.The study also highlights that the low-temperature seed-assisted growthhas a positive impact on the optical and crystalline properties ofthe material with improved photoluminescence response and a lowerlattice strain determined by X-ray diffraction. Furthermore, the studydemonstrates that this improved crystallization method has a significantinfluence on the photodetector properties of the crystal, leadingto higher detectivity and responsivity values for the seed-assistedapproach.

Název v anglickém jazyce

Impact of Low-Temperature Seed-Assisted Growth on the Structural and Optoelectronic Properties of MAPbBr(3) Single Crystals

Popis výsledku anglicky

This work presents a detailed investigation of seed andnucleation-assistedgrowth methods for the inverse temperature crystallization (ITC) ofmethyl-ammonium lead bromide single crystals. We have demonstratedthat low-temperature seed-assisted growth results in significantimprovements in both optical and electrical responses of the materialcompared to the nucleation-assisted growth. Specifically, the spacecharge limited current method reveals a reduced trap-filled limitvoltage of 0.287 V for the seed-assisted crystal compared to 0.923V for the nucleation-assisted one, resulting in differences in trapdensity values. Temperature dependence space charge limited currentanalysis confirms these results, showing trap densities of 9.47 x10(9) cm(-3) for seeded crystal growth comparedto 3.21 x 10(10) cm(-3) for the nucleation-assistedgrowth, as well as a lower trap energy level for the seeded crystal.The study also highlights that the low-temperature seed-assisted growthhas a positive impact on the optical and crystalline properties ofthe material with improved photoluminescence response and a lowerlattice strain determined by X-ray diffraction. Furthermore, the studydemonstrates that this improved crystallization method has a significantinfluence on the photodetector properties of the crystal, leadingto higher detectivity and responsivity values for the seed-assistedapproach.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

CHEMISTRY OF MATERIALS

ISSN

0897-4756

e-ISSN

1520-5002

Svazek periodika

35

Číslo periodika v rámci svazku

14

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

5458-5467

Kód UT WoS článku

001024081200001

EID výsledku v databázi Scopus

2-s2.0-85164729165