Investigation of electrical transport in semiconductor heterostructure devices coupled strongly to the light field

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of electrical transport in semiconductor heterostructure devices coupled strongly to the light field

Popis výsledku v původním jazyce

ntersubband Polaritons [1] are quasi-particles that form under strong light-matter coupling conditions in semiconductor heterostructures. The two main requirements are a high-Q tunable cavity and a suitable intersubband transition. Intersubband polaritons are predicted to enable novel applications such as the intersubband polariton laser [2]. The most characteristic feature of intersubband polaritons is their avoided-crossing property. When the detuning between the cavity resonance and the intersubband transition is very small (i.e. the cavity resonance frequency equals the intersubband transition energy) the two absorptions caused by the cavity and the intersubband transitions become indistinguishable. For the matter part we used triple-barrier resonant tunneling diodes (TBRTDs) [3]. TBRTDs are semiconductor heterostructures that consist of two quantum wells. When applying an electric field, the eigen-energies of the quantum wells can align, which leads to a resonant tunneling current. This causes sharp peaks in the IV-characteristic of the devices. TBRTDs also feature intersubband transitions, which are crucial for the formation of intersubband polaritons. The intersubband transition of interest is located at 100 meV

Název v anglickém jazyce

Investigation of electrical transport in semiconductor heterostructure devices coupled strongly to the light field

Popis výsledku anglicky

ntersubband Polaritons [1] are quasi-particles that form under strong light-matter coupling conditions in semiconductor heterostructures. The two main requirements are a high-Q tunable cavity and a suitable intersubband transition. Intersubband polaritons are predicted to enable novel applications such as the intersubband polariton laser [2]. The most characteristic feature of intersubband polaritons is their avoided-crossing property. When the detuning between the cavity resonance and the intersubband transition is very small (i.e. the cavity resonance frequency equals the intersubband transition energy) the two absorptions caused by the cavity and the intersubband transitions become indistinguishable. For the matter part we used triple-barrier resonant tunneling diodes (TBRTDs) [3]. TBRTDs are semiconductor heterostructures that consist of two quantum wells. When applying an electric field, the eigen-energies of the quantum wells can align, which leads to a resonant tunneling current. This causes sharp peaks in the IV-characteristic of the devices. TBRTDs also feature intersubband transitions, which are crucial for the formation of intersubband polaritons. The intersubband transition of interest is located at 100 meV

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Optics InfoBase Conference Papers

ISBN

978-1557-528-20-9

ISSN

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e-ISSN

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Počet stran výsledku

1

Strana od-do

1-1

Název nakladatele

Neuveden

Místo vydání

neuveden

Místo konání akce

Mnichov

Datum konání akce

23. 6. 2019

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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