The impact of Ir doping on the electrical properties of YbFe1-xIrxO3 perovskite-oxide compounds

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F20%3APU139192" target="_blank" >RIV/00216305:26620/20:PU139192 - isvavai.cz</a>

Výsledek na webu

<a href="https://link.springer.com/article/10.1007/s10854-019-02691-1" target="_blank" >https://link.springer.com/article/10.1007/s10854-019-02691-1</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10854-019-02691-1" target="_blank" >10.1007/s10854-019-02691-1</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The impact of Ir doping on the electrical properties of YbFe1-xIrxO3 perovskite-oxide compounds

Popis výsledku v původním jazyce

In this study, YbFe1-xIrxO3 (x = 0, 0.01, 0.10) compounds were synthesized by solid-state reaction method. Chemical and structural analyses of studied compounds were carried out by XPS, SEM and EDX methods. SEM and STEM studies have shown that the particle size shrinks as doping ratio increases. Electrical/dielectric properties of the synthesized compounds were performed in wide-range frequency (1-10(7) Hz) and temperature (between - 100 and 100 degrees C with 20 degrees C steps) using Novocontrol Dielectric/Impedance Spectrometer. Frequency-dependent loss tangent plots exhibited that three dielectric relaxations take place for undoped YbFeO3 (YbFO) compound, whereas two dielectric relaxations were observed for 1 and 10 mol% Ir-doped YbFO compounds. Resistivity measurement revealed that the 1 mol% Ir-substituted YbFO has lower resistivity than undoped.

Název v anglickém jazyce

The impact of Ir doping on the electrical properties of YbFe1-xIrxO3 perovskite-oxide compounds

Popis výsledku anglicky

In this study, YbFe1-xIrxO3 (x = 0, 0.01, 0.10) compounds were synthesized by solid-state reaction method. Chemical and structural analyses of studied compounds were carried out by XPS, SEM and EDX methods. SEM and STEM studies have shown that the particle size shrinks as doping ratio increases. Electrical/dielectric properties of the synthesized compounds were performed in wide-range frequency (1-10(7) Hz) and temperature (between - 100 and 100 degrees C with 20 degrees C steps) using Novocontrol Dielectric/Impedance Spectrometer. Frequency-dependent loss tangent plots exhibited that three dielectric relaxations take place for undoped YbFeO3 (YbFO) compound, whereas two dielectric relaxations were observed for 1 and 10 mol% Ir-doped YbFO compounds. Resistivity measurement revealed that the 1 mol% Ir-substituted YbFO has lower resistivity than undoped.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

ISSN

0957-4522

e-ISSN

1573-482X

Svazek periodika

31

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

14

Strana od-do

1731-1744

Kód UT WoS článku

000514350200077

EID výsledku v databázi Scopus

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