Parametrized model of IGBT inverter with losses simulation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F21%3APR34499" target="_blank" >RIV/00216305:26620/21:PR34499 - isvavai.cz</a>

Výsledek na webu

<a href="https://newcontrol.ceitec.cz/vysledky/igbt_inverter_model" target="_blank" >https://newcontrol.ceitec.cz/vysledky/igbt_inverter_model</a>

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Parametrized model of IGBT inverter with losses simulation

Popis výsledku v původním jazyce

In the NewControl project, a parameterizable model of a three-phase inverter with IGBT transistors was developed in MATLAB/Simulink. The model was created primarily for the purpose of modelling switching losses and power losses of IGBT switching elements. The model consists of three parts: the PWM signal generator, DC link and the inverter. The PWM signal generator block inserts the dead-time delays into ideal PWM signals, which prevent the upper and lower transistors in the one leg of the inverter from switching on at the same time. It serves as a short-circuit prevention in the DC link. The inverter model includes a simplified model of the gate driver, whose output impedance determines the switching dynamics of the transistors. The switching element model consists of the IGBT model and the anti-parallel diode model. The IGBTs are characterized by basic parameters and voltage drops, parasitic capacitances and by defined temperature dependence. The anti-parallel diodes are also characterized similarly. The model is created using the Simscape library. The simulation of the inverter model with respect to the time constants of the simulated events requires a very short sampling period of 100 ps. Due to detailed parameterization, the inverter model allows simulation and subsequent detailed analysis of the behaviour of power elements during transient states (turn-on and turn-off of the transistor) and during steady states. It is possible to obtain basic information such as voltages vGE, vCE and current iC, but also voltage drops, charging and discharging of parasitic capacitances or individual components of the switching and power losses. It is possible to calculate and plot the total power losses and switching losses of the power element by using the prepared scripts. Scripts also allow to perform a simulation for a given temperature vector and thus obtain the temperature dependence of the switching losses and power losses of the IGBT elements.

Název v anglickém jazyce

Parametrized model of IGBT inverter with losses simulation

Popis výsledku anglicky

In the NewControl project, a parameterizable model of a three-phase inverter with IGBT transistors was developed in MATLAB/Simulink. The model was created primarily for the purpose of modelling switching losses and power losses of IGBT switching elements. The model consists of three parts: the PWM signal generator, DC link and the inverter. The PWM signal generator block inserts the dead-time delays into ideal PWM signals, which prevent the upper and lower transistors in the one leg of the inverter from switching on at the same time. It serves as a short-circuit prevention in the DC link. The inverter model includes a simplified model of the gate driver, whose output impedance determines the switching dynamics of the transistors. The switching element model consists of the IGBT model and the anti-parallel diode model. The IGBTs are characterized by basic parameters and voltage drops, parasitic capacitances and by defined temperature dependence. The anti-parallel diodes are also characterized similarly. The model is created using the Simscape library. The simulation of the inverter model with respect to the time constants of the simulated events requires a very short sampling period of 100 ps. Due to detailed parameterization, the inverter model allows simulation and subsequent detailed analysis of the behaviour of power elements during transient states (turn-on and turn-off of the transistor) and during steady states. It is possible to obtain basic information such as voltages vGE, vCE and current iC, but also voltage drops, charging and discharging of parasitic capacitances or individual components of the switching and power losses. It is possible to calculate and plot the total power losses and switching losses of the power element by using the prepared scripts. Scripts also allow to perform a simulation for a given temperature vector and thus obtain the temperature dependence of the switching losses and power losses of the IGBT elements.

Druh

R - Software

CEP obor

—

OECD FORD obor

20205 - Automation and control systems

Projekt

<a href="/cs/project/8A19006" target="_blank" >8A19006: Integrated, Fail-Operational, Cognitive Perception, Planning and Control Systems for Highly Automated Vehicles</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Interní identifikační kód produktu

IGBT_INVERTER_MODEL

Technické parametry

Software umožňuje analyzovat chování parametrizovaného měniče včetně výkonových a spínacích ztrát.

Ekonomické parametry

Výsledekem je software, který umožňuje vývoj řídicích algoritmů v projektu NewControl v době, kdy není k dispozici reálný motor na testbenchi. Prozatím není plánováno komerční využití výsledku.

IČO vlastníka výsledku

00216305

Název vlastníka

Vysoké učení technické v Brně