Chemical vapor deposition: a potential tool for wafer scale growth of two-dimensional layered materials

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F22%3APU147271" target="_blank" >RIV/00216305:26620/22:PU147271 - isvavai.cz</a>

Výsledek na webu

<a href="https://iopscience.iop.org/article/10.1088/1361-6463/ac928d" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-6463/ac928d</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6463/ac928d" target="_blank" >10.1088/1361-6463/ac928d</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Chemical vapor deposition: a potential tool for wafer scale growth of two-dimensional layered materials

Popis výsledku v původním jazyce

The rapidly growing demand for high-performance and low-power electronic and photonic devices has driven attention towards novel two-dimensional (2D) layered materials. In this regard, 2D layered materials, including graphene, molybdenum disulfide (MoS2), and newly discovered phosphorene, have the potential to take over the existing semiconductor industry due to their intriguing features, such as excellent electrical conductivity, strong light-matter interaction, and especially the ability to scale down the resulting device to the atomic level. However, to explore the full potential of these materials in various technological applications, it is essential to develop a large-scale synthesis method that can provide uniform, defect-free thin film. The chemical vapor deposition (CVD) technique has been proven to produce large-scale and less defective 2D crystals with reasonably good quality and uniformity compared to other elaboration techniques, such as molecular beam epitaxy. This article discusses whether CVD may improve 2D layered materials growth, including graphene and MoS2, and whether it can be used to grow phosphorene. Only a few attempts have been made using CVD-like methods to grow phosphorene directly on the substrate. Still, one has to go long to establish a proper CVD method for phosphorene synthesis.

Název v anglickém jazyce

Chemical vapor deposition: a potential tool for wafer scale growth of two-dimensional layered materials

Popis výsledku anglicky

The rapidly growing demand for high-performance and low-power electronic and photonic devices has driven attention towards novel two-dimensional (2D) layered materials. In this regard, 2D layered materials, including graphene, molybdenum disulfide (MoS2), and newly discovered phosphorene, have the potential to take over the existing semiconductor industry due to their intriguing features, such as excellent electrical conductivity, strong light-matter interaction, and especially the ability to scale down the resulting device to the atomic level. However, to explore the full potential of these materials in various technological applications, it is essential to develop a large-scale synthesis method that can provide uniform, defect-free thin film. The chemical vapor deposition (CVD) technique has been proven to produce large-scale and less defective 2D crystals with reasonably good quality and uniformity compared to other elaboration techniques, such as molecular beam epitaxy. This article discusses whether CVD may improve 2D layered materials growth, including graphene and MoS2, and whether it can be used to grow phosphorene. Only a few attempts have been made using CVD-like methods to grow phosphorene directly on the substrate. Still, one has to go long to establish a proper CVD method for phosphorene synthesis.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physics D - Applied Physics

ISSN

0022-3727

e-ISSN

1361-6463

Svazek periodika

55

Číslo periodika v rámci svazku

47

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

18

Strana od-do

„“-„“

Kód UT WoS článku

000861003800001

EID výsledku v databázi Scopus

2-s2.0-85139644869