Defect-driven antiferromagnetic domain walls in CuMnAs films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F23%3APU150706" target="_blank" >RIV/00216305:26620/23:PU150706 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1109/INTERMAGShortPapers58606.2023.10228289" target="_blank" >http://dx.doi.org/10.1109/INTERMAGShortPapers58606.2023.10228289</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/INTERMAGShortPapers58606.2023.10228289" target="_blank" >10.1109/INTERMAGShortPapers58606.2023.10228289</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Defect-driven antiferromagnetic domain walls in CuMnAs films

Popis výsledku v původním jazyce

Antiferromagnetic (AF) materials offer a route to realising high-speed, high-density data storage devices that are robust against magnetic fields due to their intrinsic dynamics in the THz-regime and the lack magnetic stray fields. The key to functionality and efficiency is the control of AF domains and domain walls. Although AF domain structures are known to be sensitive to magnetoelastic effects, the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning x-ray diffraction microscopy and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects, which determine the location and orientation of 180° and 90° domain walls. The results emphasise the high sensitivity of the AF domain structure to the crystallographic nanostructure and provide a route to optimisng device performance.

Název v anglickém jazyce

Defect-driven antiferromagnetic domain walls in CuMnAs films

Popis výsledku anglicky

Antiferromagnetic (AF) materials offer a route to realising high-speed, high-density data storage devices that are robust against magnetic fields due to their intrinsic dynamics in the THz-regime and the lack magnetic stray fields. The key to functionality and efficiency is the control of AF domains and domain walls. Although AF domain structures are known to be sensitive to magnetoelastic effects, the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning x-ray diffraction microscopy and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects, which determine the location and orientation of 180° and 90° domain walls. The results emphasise the high sensitivity of the AF domain structure to the crystallographic nanostructure and provide a route to optimisng device performance.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings

ISBN

979-8-3503-3836-2

ISSN

—

e-ISSN

—

Počet stran výsledku

2

Strana od-do

„“-„“

Název nakladatele

Neuveden

Místo vydání

neuveden

Místo konání akce

Sendai

Datum konání akce

15. 5. 2023

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

—