Quantum dots array: an approach to multipixel devices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F26%3A0197897" target="_blank" >RIV/00216305:26620/26:0197897 - isvavai.cz</a>

Výsledek na webu

<a href="https://iopscience.iop.org/article/10.1088/1361-6463/adacf8" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-6463/adacf8</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6463/adacf8" target="_blank" >10.1088/1361-6463/adacf8</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Quantum dots array: an approach to multipixel devices

Popis výsledku v původním jazyce

Graphene has been proven to be an excellent material for high-frequency electromagnetic radiation detection. Here, we are reporting the graphene quantum dots (GQDs) devices designed as multi-parallel arrays of the dots (200 nm in diameter) between the source and drain electrodes. These state-of-the-art devices provide a novel concept of tuning the total device area and impedance while maintaining superior performance. The GQDs devices have been fabricated on silicon oxide substrate and analyzed for their transport properties. The multi-parallel array of GQDs on SiO2/Si substrates has depicted the possibility of tuning the activation energy depending on the back gate bias and the number of parallelly arranged GQDs while keeping the temperature dependence of resistance higher than 75 M Omega K-1 and 5 G Omega K-1 (for 2-dots and 8-dots devices). The results presented here pave the way for further optimization and realization of chip-scale arrays of GQDs-based multipixel devices, enhancing the applications in imaging and magneto-optical spectroscopy.

Název v anglickém jazyce

Quantum dots array: an approach to multipixel devices

Popis výsledku anglicky

Graphene has been proven to be an excellent material for high-frequency electromagnetic radiation detection. Here, we are reporting the graphene quantum dots (GQDs) devices designed as multi-parallel arrays of the dots (200 nm in diameter) between the source and drain electrodes. These state-of-the-art devices provide a novel concept of tuning the total device area and impedance while maintaining superior performance. The GQDs devices have been fabricated on silicon oxide substrate and analyzed for their transport properties. The multi-parallel array of GQDs on SiO2/Si substrates has depicted the possibility of tuning the activation energy depending on the back gate bias and the number of parallelly arranged GQDs while keeping the temperature dependence of resistance higher than 75 M Omega K-1 and 5 G Omega K-1 (for 2-dots and 8-dots devices). The results presented here pave the way for further optimization and realization of chip-scale arrays of GQDs-based multipixel devices, enhancing the applications in imaging and magneto-optical spectroscopy.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10300 - Physical sciences

Projekt

<a href="/cs/project/GA23-05578S" target="_blank" >GA23-05578S: Řízení spinových qubitů v kvantových paraelektrikách pomocí elektrického pole</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

JOURNAL OF PHYSICS D-APPLIED PHYSICS

ISSN

0022-3727

e-ISSN

1361-6463

Svazek periodika

58

Číslo periodika v rámci svazku

13

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

—

Kód UT WoS článku

001409813100001

EID výsledku v databázi Scopus

2-s2.0-85216924446