Graphene enhanced resonant Raman spectroscopy of gallium nitride nanocrystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F26%3A0199231" target="_blank" >RIV/00216305:26620/26:0199231 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/70883521:28110/25:63597019

Výsledek na webu

<a href="https://pubs.aip.org/aip/apl/article/126/23/233503/3349435/Graphene-enhanced-resonant-Raman-spectroscopy-of" target="_blank" >https://pubs.aip.org/aip/apl/article/126/23/233503/3349435/Graphene-enhanced-resonant-Raman-spectroscopy-of</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0270386" target="_blank" >10.1063/5.0270386</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Graphene enhanced resonant Raman spectroscopy of gallium nitride nanocrystals

Popis výsledku v původním jazyce

The scattering of lattice excitations (phonons) with the photoexcited charge carriers is of a major concern in optoelectronic devices. Here, the resonant Raman scattering will be utilized to study an exciton-phonon interaction in GaN nanocrystals, further enhanced by the underlying graphene. Raman spectroscopy using various excitation energies shows how the exciton-phonon interaction behaves, unveiling the scattering strength. The origin of the interaction is in the condition of resonance, which is directly observed in the temperature resolved spectra. Most importantly, the underlying graphene strongly enhances the coupling of phonons and excitons. Consequently, an enhanced resonant Raman spectrum of GaN nanocrystals possessing clearly observable phonon overtones up to the fourth order has been obtained. It has been demonstrated that the responsible effect is the electron transfer between nanocrystals and the underlying graphene. The utilization of such an increased coupling effect can be beneficial for a study of the charge carrier scattering in semiconducting nanomaterials, analysis of their crystal quality, improvement of sensor sensitivity, and in the subsequent development of new-generation optoelectronic devices.

Název v anglickém jazyce

Graphene enhanced resonant Raman spectroscopy of gallium nitride nanocrystals

Popis výsledku anglicky

The scattering of lattice excitations (phonons) with the photoexcited charge carriers is of a major concern in optoelectronic devices. Here, the resonant Raman scattering will be utilized to study an exciton-phonon interaction in GaN nanocrystals, further enhanced by the underlying graphene. Raman spectroscopy using various excitation energies shows how the exciton-phonon interaction behaves, unveiling the scattering strength. The origin of the interaction is in the condition of resonance, which is directly observed in the temperature resolved spectra. Most importantly, the underlying graphene strongly enhances the coupling of phonons and excitons. Consequently, an enhanced resonant Raman spectrum of GaN nanocrystals possessing clearly observable phonon overtones up to the fourth order has been obtained. It has been demonstrated that the responsible effect is the electron transfer between nanocrystals and the underlying graphene. The utilization of such an increased coupling effect can be beneficial for a study of the charge carrier scattering in semiconducting nanomaterials, analysis of their crystal quality, improvement of sensor sensitivity, and in the subsequent development of new-generation optoelectronic devices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10300 - Physical sciences

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics Letters

ISSN

0003-6951

e-ISSN

1077-3118

Svazek periodika

23

Číslo periodika v rámci svazku

126

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

—

Kód UT WoS článku

001508406700007

EID výsledku v databázi Scopus

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