Reducing Nonradiative Recombination Losses in Tin-Based Perovskite LEDs Utilizing a Self-Assembled Monolayer

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F26%3A0200637" target="_blank" >RIV/00216305:26620/26:0200637 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216275:25310/25:39923280

Výsledek na webu

<a href="https://pubs.acs.org/doi/pdf/10.1021/acsami.5c15797" target="_blank" >https://pubs.acs.org/doi/pdf/10.1021/acsami.5c15797</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsami.5c15797" target="_blank" >10.1021/acsami.5c15797</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Reducing Nonradiative Recombination Losses in Tin-Based Perovskite LEDs Utilizing a Self-Assembled Monolayer

Popis výsledku v původním jazyce

Tin-based perovskites are emerging as less-toxic alternatives to their lead-based counterparts for optoelectronic devices, such as solar cells and light-emitting diodes (LEDs). However, despite their great potential, the efficiency of pure red tin-based perovskite LEDs (Sn-LEDs) still lags behind that of lead-based perovskite LEDs (Pb-LEDs), partly due to the poor electron blocking at the PEDOT:PSS/perovskite interface. This leads to detrimental nonradiative recombination pathways that limit the performance of the LEDs. In this study, we replaced the conventional PEDOT:PSS layer with the self-assembled monolayer (SAM) EADR03, presenting, to the best of our knowledge, the first report of a SAM employed as a hole-selective layer in Sn-LEDs. EADR03 simultaneously acted as an efficient electron-blocking and hole-injecting layer, thereby reducing interfacial recombination losses and enhancing the LEDs' performance. As a result, we achieved a 3-fold enhancement in external quantum efficiency, propelling the advancement of more efficient tin-based perovskite LEDs.

Název v anglickém jazyce

Reducing Nonradiative Recombination Losses in Tin-Based Perovskite LEDs Utilizing a Self-Assembled Monolayer

Popis výsledku anglicky

Tin-based perovskites are emerging as less-toxic alternatives to their lead-based counterparts for optoelectronic devices, such as solar cells and light-emitting diodes (LEDs). However, despite their great potential, the efficiency of pure red tin-based perovskite LEDs (Sn-LEDs) still lags behind that of lead-based perovskite LEDs (Pb-LEDs), partly due to the poor electron blocking at the PEDOT:PSS/perovskite interface. This leads to detrimental nonradiative recombination pathways that limit the performance of the LEDs. In this study, we replaced the conventional PEDOT:PSS layer with the self-assembled monolayer (SAM) EADR03, presenting, to the best of our knowledge, the first report of a SAM employed as a hole-selective layer in Sn-LEDs. EADR03 simultaneously acted as an efficient electron-blocking and hole-injecting layer, thereby reducing interfacial recombination losses and enhancing the LEDs' performance. As a result, we achieved a 3-fold enhancement in external quantum efficiency, propelling the advancement of more efficient tin-based perovskite LEDs.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Materials & Interfaces

ISSN

1944-8244

e-ISSN

1944-8252

Svazek periodika

17

Číslo periodika v rámci svazku

44

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

60937-60943

Kód UT WoS článku

001599920900001

EID výsledku v databázi Scopus

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