SIMS analysis of transmuted nuclides in neutron-fluence detectors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26722445%3A_____%2F24%3AN0000215" target="_blank" >RIV/26722445:_____/24:N0000215 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

SIMS analysis of transmuted nuclides in neutron-fluence detectors

Popis výsledku v původním jazyce

Transmutation detectors (TMD) for the neutron fluence measurement were originally designed in the form of metallic foil or single crystal planchets [1]. In this work, the TMDs in the form of the subsurface implanted layers in silicon and the thin layers on top of silicon are presented together with their analyses using SIMS. The n-type (100) silicon wafer was implanted with 10B at 90 keV and 5*1015 at/cm2 and exposed to neutrons in the nuclear research reactor LVR-15 [2]. As a result of nuclear reaction 10B(n, α)7Li a distribution of transmuted species 7Li was created in the Si substrate. The SIMS depth profiles of both exposed and blank samples in Fig. 1 provided ratio of concentrations of the transmuted nuclide 7Li and the target nuclide 10B, from which the thermal neutron fluence was estimated. In another experiment a 500 nm layer of Si3N4 was grown on the n-type (100) silicon wafer and exposed to neutrons. Due to nuclear reaction 14N(n, α)11B a distribution of transmuted species 11B was created in the Si3N4/Si sample. The SIMS depth profiles then provided experimental data for the fast neutron fluence estimation. Presented at 24th International Conference on Secondary Ion Mass Spectrometry, SIMS 2024, La Rochelle, France.

Název v anglickém jazyce

SIMS analysis of transmuted nuclides in neutron-fluence detectors

Popis výsledku anglicky

Transmutation detectors (TMD) for the neutron fluence measurement were originally designed in the form of metallic foil or single crystal planchets [1]. In this work, the TMDs in the form of the subsurface implanted layers in silicon and the thin layers on top of silicon are presented together with their analyses using SIMS. The n-type (100) silicon wafer was implanted with 10B at 90 keV and 5*1015 at/cm2 and exposed to neutrons in the nuclear research reactor LVR-15 [2]. As a result of nuclear reaction 10B(n, α)7Li a distribution of transmuted species 7Li was created in the Si substrate. The SIMS depth profiles of both exposed and blank samples in Fig. 1 provided ratio of concentrations of the transmuted nuclide 7Li and the target nuclide 10B, from which the thermal neutron fluence was estimated. In another experiment a 500 nm layer of Si3N4 was grown on the n-type (100) silicon wafer and exposed to neutrons. Due to nuclear reaction 14N(n, α)11B a distribution of transmuted species 11B was created in the Si3N4/Si sample. The SIMS depth profiles then provided experimental data for the fast neutron fluence estimation. Presented at 24th International Conference on Secondary Ion Mass Spectrometry, SIMS 2024, La Rochelle, France.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10304 - Nuclear physics

Projekt

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Návaznosti

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Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů