Characterization of thin ferroelectric films using analysis of the polarization reversal kinetics: An application to P(VDF-TrFE) polymer films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24220%2F10%3A%230001734" target="_blank" >RIV/46747885:24220/10:#0001734 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Characterization of thin ferroelectric films using analysis of the polarization reversal kinetics: An application to P(VDF-TrFE) polymer films

Popis výsledku v původním jazyce

Advanced characterization techniques for ferroelectric thin films are important for successful application of ferroelectric materials in electronic devices. It is known that structural imperfections such as crystal lattice defects, grain boundaries or electrode-adjacent non-ferroelectric (dead) layers can badly deteriorate the dielectric response. We analyze the polarization reversal kinetics in systems with dead layers. We present the analysis of the experimental data within the conventional Kolmogorov-Avrami switching scenario and the exponential law for the field dependence of the domain wall velocity. In addition, we present a general characterization method for ferroelectric thin films, which is applicable to systems with the switching kinetics ofa general type.

Název v anglickém jazyce

Characterization of thin ferroelectric films using analysis of the polarization reversal kinetics: An application to P(VDF-TrFE) polymer films

Popis výsledku anglicky

Advanced characterization techniques for ferroelectric thin films are important for successful application of ferroelectric materials in electronic devices. It is known that structural imperfections such as crystal lattice defects, grain boundaries or electrode-adjacent non-ferroelectric (dead) layers can badly deteriorate the dielectric response. We analyze the polarization reversal kinetics in systems with dead layers. We present the analysis of the experimental data within the conventional Kolmogorov-Avrami switching scenario and the exponential law for the field dependence of the domain wall velocity. In addition, we present a general characterization method for ferroelectric thin films, which is applicable to systems with the switching kinetics ofa general type.

Druh

A - Audiovizuální tvorba

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/GAP204%2F10%2F0616" target="_blank" >GAP204/10/0616: Moderní pizeoelektrické perovskity: kmity krystalové mřížky a doménové stěny</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

ISBN

—

Místo vydání

Edinburgh, SCOTLAND, AUG 09-12, 2010

Název nakladatele resp. objednatele

Heriot-Watt University, Edinburgh, Scotland, UK EH14 4AS

Verze

—

Identifikační číslo nosiče

ISAF-ECAPD-2010