An impact of the boost diode selection on the overall efficiency of active power factor correctors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F16%3A43929316" target="_blank" >RIV/49777513:23220/16:43929316 - isvavai.cz</a>

Výsledek na webu

<a href="http://ieeexplore.ieee.org/document/7577270/" target="_blank" >http://ieeexplore.ieee.org/document/7577270/</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/AE.2016.7577270" target="_blank" >10.1109/AE.2016.7577270</a>

Jazyk výsledku

angličtina

Název v původním jazyce

An impact of the boost diode selection on the overall efficiency of active power factor correctors

Popis výsledku v původním jazyce

The paper focuses on a selection process of boost diodes for Active Power Factor Correctors (APFC) based on the Boost converter. The choice of the suitable boost diode plays crucial role for an efficiency of APFC. The main aim of the paper is devoted to theoretical and experimental comparison of the diodes. We have compared two ultra fast silicon diodes optimized for a Continuous Conduction Mode (CCM), soft-switching ultrafast rectifier and silicon carbide Schottky Barrier Diode (SBD). The experimental results show that the conduction losses are very similar but the switching losses are grossly different. In one case the diode optimized for soft-switching was not able to properly operate above 200W input power. It was caused likely due to the corrector works under CCM operation. Whereas, the SiC Schottky Barrier diodes are suitable for application in APFCs with high switching frequencies and working under CCM thanks to very small junction charge which is proved by this study.

Název v anglickém jazyce

An impact of the boost diode selection on the overall efficiency of active power factor correctors

Popis výsledku anglicky

The paper focuses on a selection process of boost diodes for Active Power Factor Correctors (APFC) based on the Boost converter. The choice of the suitable boost diode plays crucial role for an efficiency of APFC. The main aim of the paper is devoted to theoretical and experimental comparison of the diodes. We have compared two ultra fast silicon diodes optimized for a Continuous Conduction Mode (CCM), soft-switching ultrafast rectifier and silicon carbide Schottky Barrier Diode (SBD). The experimental results show that the conduction losses are very similar but the switching losses are grossly different. In one case the diode optimized for soft-switching was not able to properly operate above 200W input power. It was caused likely due to the corrector works under CCM operation. Whereas, the SiC Schottky Barrier diodes are suitable for application in APFCs with high switching frequencies and working under CCM thanks to very small junction charge which is proved by this study.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

International Conference on Applied Electronics (AE 2016) : proceedings

ISBN

978-80-261-0601-2

ISSN

1803-7232

e-ISSN

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Počet stran výsledku

4

Strana od-do

187-190

Název nakladatele

IEEE

Místo vydání

Piscataway

Místo konání akce

Pilsen, Czech Republic

Datum konání akce

6. 9. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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