Effect of nitrogen content on electronic structure and properties of SiBCN materials

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F11%3A43898420" target="_blank" >RIV/49777513:23520/11:43898420 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.actamat.2010.12.030" target="_blank" >http://dx.doi.org/10.1016/j.actamat.2010.12.030</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.actamat.2010.12.030" target="_blank" >10.1016/j.actamat.2010.12.030</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of nitrogen content on electronic structure and properties of SiBCN materials

Popis výsledku v původním jazyce

Amorphous SiBCN materials were prepared using reactive magnetron sputtering, and their structure, electronic structure and electrical and optical properties were studied using a combined approach of experiment and ab initio calculations. We focus on theeffect of N content over a wide range on the material properties. We find that decreasing the N content (from 54 to 0 at.%) decreases the electrical resistivity (from }10^8 to 0.2 ohm meter) and the optical gap (from 3.5 eV to almost 0), and explain theeffect in terms of the band gap and the localization of electronic states. The results allow one to tailor SiBCN compositions which can combine different functional properties, such as high thermal stability and electrical conductivity.

Název v anglickém jazyce

Effect of nitrogen content on electronic structure and properties of SiBCN materials

Popis výsledku anglicky

Amorphous SiBCN materials were prepared using reactive magnetron sputtering, and their structure, electronic structure and electrical and optical properties were studied using a combined approach of experiment and ab initio calculations. We focus on theeffect of N content over a wide range on the material properties. We find that decreasing the N content (from 54 to 0 at.%) decreases the electrical resistivity (from }10^8 to 0.2 ohm meter) and the optical gap (from 3.5 eV to almost 0), and explain theeffect in terms of the band gap and the localization of electronic states. The results allow one to tailor SiBCN compositions which can combine different functional properties, such as high thermal stability and electrical conductivity.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

—

Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Acta Materialia

ISSN

1359-6454

e-ISSN

—

Svazek periodika

59

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

9

Strana od-do

2341-2349

Kód UT WoS článku

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EID výsledku v databázi Scopus

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