Strongly thermochromic W-doped VO2 films with large temperature coefficient of electrical resistance near room temperature prepared by fast low-temperature synthesis

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F25%3A43977286" target="_blank" >RIV/49777513:23520/25:43977286 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Strongly thermochromic W-doped VO2 films with large temperature coefficient of electrical resistance near room temperature prepared by fast low-temperature synthesis

Popis výsledku v původním jazyce

We report the crystal structure, electronic band structure, optical and electrical properties, and semiconductor-metal transition characteristics of strongly thermochromic W-doped VO2 films with a large temperature coefficient of electrical resistance at a small hysteresis width of electrical resistivity near room temperature, and with a wide temperature operation range at a high detection sensitivity and low values of the electrical resistivity. They were deposited at a reduced substrate temperature of 350 °C onto soda-lime glass (SLG) with two versions of yttria-stabilized zirconia (YSZ) interlayers possessing different cubic crystal orientations, and onto bare SLG and monocrystalline YSZ and Al2O3 substrates for comparison. The W-doped VO2 depositions were performed using reactive deep oscillation magnetron sputtering (DOMS) with feedback pulsed O2 flow control and to-substrate O2 injection into a high-density plasma in front of the sputter V-W target. The DOMS is a modified version of high-power impulse magnetron sputtering with macropulses composed of short high-power micropulses (10 in this work) making it possible to increase discharge stability and deposition rate of films.

Název v anglickém jazyce

Strongly thermochromic W-doped VO2 films with large temperature coefficient of electrical resistance near room temperature prepared by fast low-temperature synthesis

Popis výsledku anglicky

We report the crystal structure, electronic band structure, optical and electrical properties, and semiconductor-metal transition characteristics of strongly thermochromic W-doped VO2 films with a large temperature coefficient of electrical resistance at a small hysteresis width of electrical resistivity near room temperature, and with a wide temperature operation range at a high detection sensitivity and low values of the electrical resistivity. They were deposited at a reduced substrate temperature of 350 °C onto soda-lime glass (SLG) with two versions of yttria-stabilized zirconia (YSZ) interlayers possessing different cubic crystal orientations, and onto bare SLG and monocrystalline YSZ and Al2O3 substrates for comparison. The W-doped VO2 depositions were performed using reactive deep oscillation magnetron sputtering (DOMS) with feedback pulsed O2 flow control and to-substrate O2 injection into a high-density plasma in front of the sputter V-W target. The DOMS is a modified version of high-power impulse magnetron sputtering with macropulses composed of short high-power micropulses (10 in this work) making it possible to increase discharge stability and deposition rate of films.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

20506 - Coating and films

Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů