Disentangling bulk and surface Rashba effects in ferroelectric ?-GeTe

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F16%3A43930941" target="_blank" >RIV/49777513:23640/16:43930941 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1103/PhysRevB.94.205111" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.94.205111</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.94.205111" target="_blank" >10.1103/PhysRevB.94.205111</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Disentangling bulk and surface Rashba effects in ferroelectric ?-GeTe

Popis výsledku v původním jazyce

Macroscopic ferroelectric order in ?-GeTe with its noncentrosymmetric lattice structure leads to a giant Rashba spin splitting in the bulk bands due to strong spin-orbit interaction. Direct measurements of the bulk band structure using soft x-ray angle-resolved photoemission (ARPES) reveals the three-dimensional electronic structure with spindle torus shape. By combining high-resolution and spin-resolved ARPES as well as photoemission calculations, the bulk electronic structure is disentangled from the two-dimensional surface electronic structure by means of surface capping, which quenches the complex surface electronic structure. This unravels the bulk Rashba-split states in the ferroelectric Rashba ?-GeTe(111) semiconductor exhibiting a giant spin splitting with Rashba parameter ?R around 4.2 eV A?, the highest of so-far known materials.

Název v anglickém jazyce

Disentangling bulk and surface Rashba effects in ferroelectric ?-GeTe

Popis výsledku anglicky

Macroscopic ferroelectric order in ?-GeTe with its noncentrosymmetric lattice structure leads to a giant Rashba spin splitting in the bulk bands due to strong spin-orbit interaction. Direct measurements of the bulk band structure using soft x-ray angle-resolved photoemission (ARPES) reveals the three-dimensional electronic structure with spindle torus shape. By combining high-resolution and spin-resolved ARPES as well as photoemission calculations, the bulk electronic structure is disentangled from the two-dimensional surface electronic structure by means of surface capping, which quenches the complex surface electronic structure. This unravels the bulk Rashba-split states in the ferroelectric Rashba ?-GeTe(111) semiconductor exhibiting a giant spin splitting with Rashba parameter ?R around 4.2 eV A?, the highest of so-far known materials.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/LO1402" target="_blank" >LO1402: CENTEM+</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

PHYSICAL REVIEW B

ISSN

2469-9950

e-ISSN

—

Svazek periodika

94

Číslo periodika v rámci svazku

20

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

2051111-2051117

Kód UT WoS článku

000387537700004

EID výsledku v databázi Scopus

2-s2.0-84994639281