Kinetics of the laser-induced solid phase crystallization of amorphoussilicon —Time-resolved Raman spectroscopy and computersimulations

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F17%3A43930064" target="_blank" >RIV/49777513:23640/17:43930064 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.apsusc.2016.09.053" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2016.09.053</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2016.09.053" target="_blank" >10.1016/j.apsusc.2016.09.053</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Kinetics of the laser-induced solid phase crystallization of amorphoussilicon —Time-resolved Raman spectroscopy and computersimulations

Popis výsledku v původním jazyce

This study demonstrates that a laser-induced crystallization instrumented with Raman spectroscopy is, in general, an effective tool to study the thermally activated crystallization kinetics. It is shown, for the solid phase crystallization of an amorphous silicon thin film, that the integral intensity of Raman spectra corresponding to the crystalline phase grows linearly in the time-logarithmic scale. A mathematical model, which assumes random nucleation and crystal growth, was designed to simulate the crystallization process in the non-uniform temperature field induced by laser. The model is based on solving the Eikonal equation and the Arhenius temperature dependence of the crystal nucleation and the growth rate. These computer simulations successfully approximate the crystallization process kinetics and suggest that laser-induced crystallization is primarily thermally activated.

Název v anglickém jazyce

Kinetics of the laser-induced solid phase crystallization of amorphoussilicon —Time-resolved Raman spectroscopy and computersimulations

Popis výsledku anglicky

This study demonstrates that a laser-induced crystallization instrumented with Raman spectroscopy is, in general, an effective tool to study the thermally activated crystallization kinetics. It is shown, for the solid phase crystallization of an amorphous silicon thin film, that the integral intensity of Raman spectra corresponding to the crystalline phase grows linearly in the time-logarithmic scale. A mathematical model, which assumes random nucleation and crystal growth, was designed to simulate the crystallization process in the non-uniform temperature field induced by laser. The model is based on solving the Eikonal equation and the Arhenius temperature dependence of the crystal nucleation and the growth rate. These computer simulations successfully approximate the crystallization process kinetics and suggest that laser-induced crystallization is primarily thermally activated.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

APPLIED SURFACE SCIENCE

ISSN

0169-4332

e-ISSN

—

Svazek periodika

392

Číslo periodika v rámci svazku

15 January 2017

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

867-871

Kód UT WoS článku

000389088300098

EID výsledku v databázi Scopus

2-s2.0-84988920455