Topological material in the III-V family: Heteroepitaxial InBi on InAs

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F24%3A43974543" target="_blank" >RIV/49777513:23640/24:43974543 - isvavai.cz</a>

Výsledek na webu

<a href="https://journals.aps.org/prresearch/abstract/10.1103/PhysRevResearch.6.043116" target="_blank" >https://journals.aps.org/prresearch/abstract/10.1103/PhysRevResearch.6.043116</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevResearch.6.043116" target="_blank" >10.1103/PhysRevResearch.6.043116</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Topological material in the III-V family: Heteroepitaxial InBi on InAs

Popis výsledku v původním jazyce

InBi(0 01) is formed epitaxially on InAs(1 1 1)-A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III-V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(0 0 1) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(0 01) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi-Bi hopping terms, and no Bi-In interaction, gives a deeper insight into the spin texture.

Název v anglickém jazyce

Topological material in the III-V family: Heteroepitaxial InBi on InAs

Popis výsledku anglicky

InBi(0 01) is formed epitaxially on InAs(1 1 1)-A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III-V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(0 0 1) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(0 01) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi-Bi hopping terms, and no Bi-In interaction, gives a deeper insight into the spin texture.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review Research

ISSN

2643-1564

e-ISSN

2643-1564

Svazek periodika

6

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

—

Kód UT WoS článku

001360885300003

EID výsledku v databázi Scopus

2-s2.0-85209728636