Electronegativity effects on the bandgap bowing characters in compound-semiconductor ternary alloys

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60076658%3A12520%2F10%3A43888488" target="_blank" >RIV/60076658:12520/10:43888488 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.worldscientific.com/doi/abs/10.1142/S0219581X10007356" target="_blank" >http://www.worldscientific.com/doi/abs/10.1142/S0219581X10007356</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1142/S0219581X10007356" target="_blank" >10.1142/S0219581X10007356</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electronegativity effects on the bandgap bowing characters in compound-semiconductor ternary alloys

Popis výsledku v původním jazyce

We present a theoretical investigation of the existence and origins of the bandgap bowing character in compound semiconductor alloys based on both the sp3s*-tight-binding (TB) method, which includes the spinorbit coupling, and the first-principle Full-Potential Linear Augmented Plane Wave (FP-LAPW) technique. First, we compare the bandgap variation versus composition in the III-V direct-bandgap-GaAs-based ternary alloys, namely between the common-cation GaSbxAs1-x and the common-anion Ga 1-xInxAs ternary alloys. The results show that the bowing behavior exists only in the common-cation (i.e., GaSbAs) alloys as a result of an existing competition between the anion atoms (Sb and As) in trapping the electronic charge. The bowing parameter is found to be proportional to the electronegativity characters of the competing anions (i.e., chí anion). The lack of such competition, in the case of common-anion alloys (i.e., GaInAs), makes the bowing be just absent and the variation of the bandgap b

Název v anglickém jazyce

Electronegativity effects on the bandgap bowing characters in compound-semiconductor ternary alloys

Popis výsledku anglicky

We present a theoretical investigation of the existence and origins of the bandgap bowing character in compound semiconductor alloys based on both the sp3s*-tight-binding (TB) method, which includes the spinorbit coupling, and the first-principle Full-Potential Linear Augmented Plane Wave (FP-LAPW) technique. First, we compare the bandgap variation versus composition in the III-V direct-bandgap-GaAs-based ternary alloys, namely between the common-cation GaSbxAs1-x and the common-anion Ga 1-xInxAs ternary alloys. The results show that the bowing behavior exists only in the common-cation (i.e., GaSbAs) alloys as a result of an existing competition between the anion atoms (Sb and As) in trapping the electronic charge. The bowing parameter is found to be proportional to the electronegativity characters of the competing anions (i.e., chí anion). The lack of such competition, in the case of common-anion alloys (i.e., GaInAs), makes the bowing be just absent and the variation of the bandgap b

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

International Journal of Nanoscience

ISSN

0219-581X

e-ISSN

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Svazek periodika

9

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

SG - Singapurská republika

Počet stran výsledku

9

Strana od-do

609-617

Kód UT WoS článku

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EID výsledku v databázi Scopus

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