Emergence of half metallicity in Cr-doped GaP dilute magnetic semiconductor compound within solubility limit
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60076658%3A12520%2F12%3A43883582" target="_blank" >RIV/60076658:12520/12:43883582 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1016/j.jallcom.2012.04.122" target="_blank" >http://dx.doi.org/10.1016/j.jallcom.2012.04.122</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jallcom.2012.04.122" target="_blank" >10.1016/j.jallcom.2012.04.122</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Emergence of half metallicity in Cr-doped GaP dilute magnetic semiconductor compound within solubility limit
Popis výsledku v původním jazyce
The electronic and magnetic properties of Ga1-xCrxP dilute magnetic semiconductor (DMS) compound for dopant concentration, x = 0.25, 0.125, 0.06 and 0.03 have been investigated using WIEN2k implementation of full potential linearized augmented plane wave(FPLAPW) method in order to seek out the possibility of new dilute magnetic semiconductor (DMS) compound within generalized gradient approximation (GGA) as exchange-correlation (XC) potential. The calculated results show that the Cr doping in GaP induces the ferromagnetism and originates a half metallic (HM) gap at Fermi level (E-F) in minority spin channel (MIC) for all concentrations. The half metallicity is originated by the hybridization of Cr-d states with P-p states. Moreover, the half metallicity remains intact for all Cr-concentration. We also observed that the HM gap increases with the reduction in doping concentration from 0.25 to 0.03. The total magnetic moment of this compound is mainly due to Cr-d states present at E-F. A
Název v anglickém jazyce
Emergence of half metallicity in Cr-doped GaP dilute magnetic semiconductor compound within solubility limit
Popis výsledku anglicky
The electronic and magnetic properties of Ga1-xCrxP dilute magnetic semiconductor (DMS) compound for dopant concentration, x = 0.25, 0.125, 0.06 and 0.03 have been investigated using WIEN2k implementation of full potential linearized augmented plane wave(FPLAPW) method in order to seek out the possibility of new dilute magnetic semiconductor (DMS) compound within generalized gradient approximation (GGA) as exchange-correlation (XC) potential. The calculated results show that the Cr doping in GaP induces the ferromagnetism and originates a half metallic (HM) gap at Fermi level (E-F) in minority spin channel (MIC) for all concentrations. The half metallicity is originated by the hybridization of Cr-d states with P-p states. Moreover, the half metallicity remains intact for all Cr-concentration. We also observed that the HM gap increases with the reduction in doping concentration from 0.25 to 0.03. The total magnetic moment of this compound is mainly due to Cr-d states present at E-F. A
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BH - Optika, masery a lasery
OECD FORD obor
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Návaznosti výsledku
Projekt
<a href="/cs/project/ED2.1.00%2F01.0024" target="_blank" >ED2.1.00/01.0024: Jihočeské výzkumné centrum akvakultury a biodiverzity hydrocenóz</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2012
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
JOURNAL OF ALLOYS AND COMPOUNDS
ISSN
0925-8388
e-ISSN
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Svazek periodika
536
Číslo periodika v rámci svazku
Neuveden
Stát vydavatele periodika
CH - Švýcarská konfederace
Počet stran výsledku
5
Strana od-do
214-218
Kód UT WoS článku
000306691900035
EID výsledku v databázi Scopus
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