IR-induced features of AgGaGeS4 crystalline semiconductors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60076658%3A12520%2F12%3A43884016" target="_blank" >RIV/60076658:12520/12:43884016 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.jpcs.2011.11.026" target="_blank" >http://dx.doi.org/10.1016/j.jpcs.2011.11.026</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jpcs.2011.11.026" target="_blank" >10.1016/j.jpcs.2011.11.026</a>

Jazyk výsledku

angličtina

Název v původním jazyce

IR-induced features of AgGaGeS4 crystalline semiconductors

Popis výsledku v původním jazyce

Complex investigations of the photoconductivity and photoinduced absorption together with the piezoelectric features were performed for the AgGaGeS4 semiconducting single crystals under the influence of 3.5 mu s CO2 (80 mJ) pulsed laser emitting at 10.6mu m. These crystals are transparent in the wide spectral range 0.4-17 mu m, which allows operating due to their properties in the spectral range covering the excitation of the phonons and electron subsystem. The piezoelectric properties show substantialincrement during illumination by microsecond CO2 laser and irreversible relaxation after swathing off the laser excitation. The temperature dependent studies of absorption and photoconductivity confirm the main role of intrinsic defects forming the tails of electronic states below the bottom of conduction band gap. Principal role of IR-induced electron-phonon interactions in the observed changes of the piezoelectricity is demonstrated.

Název v anglickém jazyce

IR-induced features of AgGaGeS4 crystalline semiconductors

Popis výsledku anglicky

Complex investigations of the photoconductivity and photoinduced absorption together with the piezoelectric features were performed for the AgGaGeS4 semiconducting single crystals under the influence of 3.5 mu s CO2 (80 mJ) pulsed laser emitting at 10.6mu m. These crystals are transparent in the wide spectral range 0.4-17 mu m, which allows operating due to their properties in the spectral range covering the excitation of the phonons and electron subsystem. The piezoelectric properties show substantialincrement during illumination by microsecond CO2 laser and irreversible relaxation after swathing off the laser excitation. The temperature dependent studies of absorption and photoconductivity confirm the main role of intrinsic defects forming the tails of electronic states below the bottom of conduction band gap. Principal role of IR-induced electron-phonon interactions in the observed changes of the piezoelectricity is demonstrated.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

<a href="/cs/project/ED2.1.00%2F01.0024" target="_blank" >ED2.1.00/01.0024: Jihočeské výzkumné centrum akvakultury a biodiverzity hydrocenóz</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

ISSN

0022-3697

e-ISSN

—

Svazek periodika

73

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

5

Strana od-do

439-443

Kód UT WoS článku

000300469300009

EID výsledku v databázi Scopus

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